Reduced Staebler–Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films

1990 ◽  
Vol 56 (17) ◽  
pp. 1685-1687 ◽  
Author(s):  
Mustafa Pinarbasi ◽  
John R. Abelson ◽  
Mark J. Kushner
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Films ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

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