Insituobservations of optical emission spectra in the diamond deposition environment of arc discharge plasma chemical vapor deposition

1990 ◽  
Vol 57 (14) ◽  
pp. 1467-1469 ◽  
Author(s):  
Fangqing Zhang ◽  
Yafei Zhang ◽  
Yinghu Yang ◽  
Guanghua Chen ◽  
Xiangliu Jiang
Keyword(s):  
Vapor Deposition ◽  
Discharge Plasma ◽  
Arc Discharge ◽  
Emission Spectra ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Plasma Chemical ◽  
Diamond Deposition ◽  
Plasma Chemical Vapor Deposition ◽  
Optical Emission Spectra

Quantum Characterization of Si Nano-Particles Fabricated by Multi-Hollow Discharge Plasma Chemical Vapor Deposition

2016 ◽  
Vol 8 (3) ◽  
pp. 636-639
Author(s):  
Hyunwoong Seo ◽  
Giichiro Uchida ◽  
Naho Itagaki ◽  
Kazunori Koga ◽  
Masaharu Shiratani
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Discharge Plasma ◽  
Chemical Vapor ◽  
Nano Particles ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Optical emission spectroscopy during the bias-enhanced nucleation of diamond microcrystals by microwave plasma chemical vapor deposition process

1996 ◽  
Vol 11 (11) ◽  
pp. 2852-2860 ◽  
Author(s):  
H. C. Barshilia ◽  
B. R. Mehta ◽  
V. D. Vankar
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Deposition Process ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Microwave plasma chemical vapor deposition (MWPCVD) process has been used to grow diamond thin films on silicon substrates from CH4–H2 gas mixture. Bias-enhanced nucleation (BEN) pretreatment has been used to increase the density of diamond nuclei. Various species in the CH4–H2 plasma have been identified using optical emission spectroscopy (OES), and their effect on the film microstructure has been studied. During the pretreatment process the emission intensities of CH, CH+, C2, H, and H2* species have been found to increase significantly for a negative dc bias voltage |VB| > 60 V. The higher concentration of excited species and the associated effects play a significant role in the growth process. A very thin layer of a-C containing predominant sp3 bonded carbon species in the initial stages of the growth is found to be present in these films. The microstructure of the films has been found to be very sensitive to the biasing conditions.

Diamond deposition from fluorinated precursors using microwave‐plasma chemical vapor deposition

1995 ◽  
Vol 67 (16) ◽  
pp. 2379-2381 ◽  
Author(s):  
Ciaran A. Fox ◽  
Mark C. McMaster ◽  
Wen L. Hsu ◽  
Michael A. Kelly ◽  
Stig B. Hagstrom
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Diamond Deposition ◽  
Plasma Chemical Vapor Deposition

Formation of Diamond Films by Intermittent Discharge Plasma Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4400-4403 ◽  
Author(s):  
Mikio Noda ◽  
Hiroshi Kusakabe ◽  
Kazuya Taniguchi ◽  
Shigeo Maruno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Discharge Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition
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