InGaAs/InP double‐heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition

1991 ◽  
Vol 59 (21) ◽  
pp. 2697-2699 ◽  
Author(s):  
Michio Ohkubo ◽  
Akira Iketani ◽  
Tetsurou Ijichi ◽  
Toshio Kikuta





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