δ‐doped AlGaAs and AlGaAs/InGaAs high electron mobility transistor structures grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.107003 ◽

1992 ◽

Vol 60 (19) ◽

pp. 2380-2382 ◽

Author(s):

G. M. Yang ◽

S. G. Park ◽

K. S. Seo ◽

B. D. Choe

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Metalorganic Chemical

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A δ-doped GaAs/In0.37Ga0.63As/GaAs high electron mobility transistor prepared by low-pressure metalorganic chemical vapor deposition

Solid-State Electronics ◽

10.1016/0038-1101(92)90029-c ◽

1992 ◽

Vol 35 (5) ◽

pp. 635-638 ◽

Author(s):

W.C. Hsu ◽

H.M. Shieh

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Low Pressure ◽

High Electron ◽

High Electron Mobility ◽

Metalorganic Chemical

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Extremely high electron mobility in a GaAs‐GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.101851 ◽

1989 ◽

Vol 55 (5) ◽

pp. 457-459 ◽

Author(s):

M. Razeghi ◽

M. Defour ◽

F. Omnes ◽

M. Dobers ◽

J. P. Vieren ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron ◽

High Electron Mobility ◽

Metalorganic Chemical

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High electron mobility GaN/AlxGa1−xN heterostructures grown by low‐pressure metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.104886 ◽

1991 ◽

Vol 58 (21) ◽

pp. 2408-2410 ◽

Author(s):

M. Asif Khan ◽

J. M. Van Hove ◽

J. N. Kuznia ◽

D. T. Olson

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

High Electron ◽

High Electron Mobility ◽

Metalorganic Chemical

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Growth of pseudomorphic high electron mobility heterostructures by atmospheric pressure metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.102806 ◽

1990 ◽

Vol 56 (3) ◽

pp. 274-276 ◽

Author(s):

N. Pan ◽

J. Carter ◽

X. L. Zheng ◽

H. Hendriks ◽

W. E. Hoke ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Atmospheric Pressure ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron ◽

High Electron Mobility ◽

Metalorganic Chemical

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Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c102 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C102 ◽

Author(s):

Josephine Selvaraj ◽

Susai Lawrence Selvaraj ◽

Makoto Miyoshi ◽

Yoshitaka Kuraoka ◽

Mitsuhiro Tanaka ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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High electron mobility in the selectively doped heterostructures grown by normal pressure metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.337648 ◽

1986 ◽

Vol 60 (1) ◽

pp. 334-337 ◽

Author(s):

Y. Mori ◽

F. Nakamura ◽

N. Watanabe

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Normal Pressure ◽

High Electron ◽

High Electron Mobility ◽

Metalorganic Chemical

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Inverted pseudomorphic high electron mobility heterostructures by atmospheric pressure metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.104448 ◽

1991 ◽

Vol 58 (1) ◽

pp. 71-73 ◽

Author(s):

N. Pan ◽

J. Carter ◽

X. L. Zheng ◽

H. Hendriks ◽

C. H. Wu ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Atmospheric Pressure ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron ◽

High Electron Mobility ◽

Metalorganic Chemical

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The Epitaxial Growth of High Electron Mobility InGaAs by Metalorganic Chemical Vapor Deposition with Triethylindium for InP-based HEMTs

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ◽

10.1109/iciprm.2006.1634199 ◽

2006 ◽

Author(s):

M. Uchida ◽

G. Araki

Keyword(s):

Chemical Vapor Deposition ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Electron Mobility ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron ◽

High Electron Mobility ◽

Metalorganic Chemical

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Chemical beam epitaxy selectively-regrown n+-GaAs layer on metalorganic chemical vapor deposition grown GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistor structure

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90421-9 ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 261-267 ◽

Author(s):

P. Bove ◽

K. Ono ◽

K. Joshin ◽

H. Tanaka ◽

K. Kasai ◽

...

Keyword(s):

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

High Electron ◽

Chemical Beam Epitaxy ◽

Transistor Structure ◽

High Electron Mobility ◽

Metalorganic Chemical

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Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.3122347 ◽

2009 ◽

Vol 94 (15) ◽

pp. 153506 ◽

Author(s):

David F. Brown ◽

Rongming Chu ◽

Stacia Keller ◽

Steven P. DenBaars ◽

Umesh K. Mishra

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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