Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template

2009 ◽  
Vol 48 (4) ◽  
pp. 04C102 ◽  
Author(s):  
Josephine Selvaraj ◽  
Susai Lawrence Selvaraj ◽  
Makoto Miyoshi ◽  
Yoshitaka Kuraoka ◽  
Mitsuhiro Tanaka ◽  
...  
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