Silver on diamond Schottky diodes formed on boron doped hot‐filament chemical vapor deposited polycrystalline diamond films

1992 ◽  
Vol 61 (9) ◽  
pp. 1119-1121 ◽  
Author(s):  
G. Zhao ◽  
T. Stacy ◽  
E. J. Charlson ◽  
E. M. Charlson ◽  
C. H. Chao ◽  
...  
1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  

2002 ◽  
Vol 41 (Part 1, No. 5A) ◽  
pp. 3081-3084 ◽  
Author(s):  
Yang-Do Kim ◽  
Woon Choi ◽  
Chae-Hyun Wang ◽  
Toshihiro Ando ◽  
Hyeongtag Jeon ◽  
...  

1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.


2018 ◽  
Vol 44 (15) ◽  
pp. 17845-17851 ◽  
Author(s):  
Kang An ◽  
Liangxian Chen ◽  
Xiongbo Yan ◽  
Xin Jia ◽  
Jinlong Liu ◽  
...  

1988 ◽  
Vol 53 (7) ◽  
pp. 586-588 ◽  
Author(s):  
G. Sh. Gildenblat ◽  
S. A. Grot ◽  
C. R. Wronski ◽  
A. R. Badzian ◽  
T. Badzian ◽  
...  

1994 ◽  
Vol 339 ◽  
Author(s):  
G. Zhao ◽  
T. Stacy ◽  
E. M. Charlson ◽  
E. J. Charlson ◽  
M. Hajsaid ◽  
...  

ABSTRACTWe are reporting the first quantitative photoresponse characteristics of boron doped hot-filament CVD (HFCVD) diamond based Schottky diodes using semi-transparent aluminum contacts in the spectral range of 300–1050 nm. Quantum efficiencies, obtained without correction for surface reflection in the visible and near UV region, were between 5 % and 10% when the diodes were unbiased. Effect of reverse bias on the photoresponse was investigated at selected photon energies. Reverse biased diodes exhibit increasing photoresponse and ultimately saturation. Quantum efficiency as high as 30% was also obtained at 500 nm, when a reverse bias of over I volt was applied. The photoresponse mechanism of CVD diamond Schottky diodes is also discussed. A Schottky barrier height of 1.15 ± 0.02 eV for Al-HFCVD diamond contacts was determined using the d.c. photoelectric method.


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