scholarly journals Growth Rate and Electrochemical Properties of Boron-Doped Diamond Films Prepared by Hot-Filament Chemical Vapor Deposition Methods

2016 ◽  
Vol 14 (0) ◽  
pp. 53-58 ◽  
Author(s):  
Hiroshi Nagasaka ◽  
Yoshikazu Teranishi ◽  
Yuriko Kondo ◽  
Takeshi Miyamoto ◽  
Tetsuhide Shimizu
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Electrochemical Properties ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Hot Filament

Synchrotron radiation X-ray analysis of boron-doped diamond films grown by hot-filament assisted chemical vapor deposition

2002 ◽  
Vol 11 (2) ◽  
pp. 153-159 ◽  
Author(s):  
Leide L.G Silva ◽  
Margareth K Franco ◽  
Fabiano Yokaichiya ◽  
Neidenei G Ferreira ◽  
Evaldo J Corat
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Boron Doped ◽  
Hot Filament

Characterization of undoped and boron-doped polycrystalline diamond films synthesized by hot-filament chemical vapor deposition using methanol

1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Hot Filament

Thermally stable heavily boron-doped diamond resistors fabricated via selective area growth by hot-filament chemical vapor deposition

2019 ◽  
Vol 680 ◽  
pp. 81-84
Author(s):  
Shin-ichiro Suzuki ◽  
Shinya Ohmagari ◽  
Hiroyuki Kawashima ◽  
Takeyasu Saito ◽  
Hitoshi Umezawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Area Growth ◽  
Thermally Stable ◽  
Boron Doped Diamond ◽  
Selective Area ◽  
Boron Doped ◽  
Area Growth ◽  
Hot Filament

Heat resistance properties of various boron-doped diamond films prepared via hot filament chemical vapor deposition

2020 ◽  
Vol 34 (07n09) ◽  
pp. 2040045
Author(s):  
Mun Ki Bae ◽  
Chi Hwan Kim ◽  
Yeong Min Park ◽  
Su Jong Yoon ◽  
Tae Gyu Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Heat Resistance ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Boron Doped Diamond ◽  
Surface Appearance ◽  
Boron Doped ◽  
High Temperature Furnace ◽  
Hot Filament

We used hot filament chemical vapor deposition to synthesize conductive diamond layers. Scanning electron microscopy (SEM), Raman spectroscopy, and X-ray diffraction (XRD) were employed to explore how boron affected diamond formation in terms of structural chemistry, surface appearance, and growth rate. As the boron/carbon (B/C) ratio increased, thin boron-doped diamonds (BDDs) exhibited increased levels of amorphous carbon. We used a high-temperature furnace to explore the heat resistance of BDDs.

Nitrogen and Bias Effect on Homoepitaxial Diamond Growth by Hot-Filament Chemical Vapor Deposition

2010 ◽  
Vol 443 ◽  
pp. 510-515 ◽  
Author(s):  
Hung Yin Tsai ◽  
Chih Cheng Chang ◽  
Chih Wei Wu
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Hot Filament

The development of homoepitaxial films for advanced device applications has been studied, but high growth rate and diamond film quality have not yet been explored. In the current study, high quality homoepitaxial diamond films were grown on type Ib (100) HPHT synthetic diamond substrate by hot-filament chemical vapor deposition. The reactant gases were mixed by CH4 and H2 with small amounts of N2 (500 to 3000 ppm). Besides, a bias system was used to assist diamond film deposition. The pyramidal crystals on diamond surface can be suppressed and high quality diamond film of FWHM (Full Width at Half Maximum) = 10.76 cm-1 with high growth rate of 8.78 ± 0.2 μm/ hr was obtained at the condition of adding 1000 ppm nitrogen. At the bias voltage of -150 V, the pyramidal crystals can also be suppressed and high quality diamond film of FWHM = 10.19 cm-1 was obtained. With nitrogen addition above 2000 ppm, diamond film was partly doped and some sp2 structures appeared. These homoepitaxial diamond films were characterized by optical microscopy and micro-Raman spectroscopy.

Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition

2010 ◽  
Vol 82 (8) ◽  
Author(s):  
Akihiro Kawano ◽  
Hitoshi Ishiwata ◽  
Shingo Iriyama ◽  
Ryosuke Okada ◽  
Takahide Yamaguchi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Insulator Transition ◽  
Boron Doped Diamond ◽  
Boron Doped
Sign in / Sign up

Export Citation Format

Share Document