Fracture strength and toughness of chemical-vapor-deposited polycrystalline diamond films

2018 ◽  
Vol 44 (15) ◽  
pp. 17845-17851 ◽  
Author(s):  
Kang An ◽  
Liangxian Chen ◽  
Xiongbo Yan ◽  
Xin Jia ◽  
Jinlong Liu ◽  
...  
Keyword(s):  
Fracture Strength ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Chemical Vapor Deposited ◽  
Strength And Toughness

Fracture strength measurement of filament assisted CVD polycrystalline diamond films

1992 ◽  
Vol 7 (6) ◽  
pp. 1432-1437 ◽  
Author(s):  
G.F. Cardinale ◽  
C.J. Robinson
Keyword(s):  
Fracture Strength ◽  
Microwave Plasma ◽  
Natural Diamond ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
High Strength ◽  
Coarse Grained ◽  
Diamond Growth ◽  
Growth Surface

The fracture strength of polycrystalline diamond films deposited by filament assisted chemical vapor deposition in the thickness range of 3.5 to 160 μm is investigated. Using a burst pressure technique, the fracture strengths of circular diamond film specimens are calculated. An average fracture strength of 730 MPa for nine samples was computed. This value is in good agreement with published strengths of microwave plasma deposited diamond films, comparable to other high strength materials, and within an order of magnitude of the fracture strength of bulk natural diamond. The average fracture strength of the fine-grained substrate interface appears consistently higher than that of the coarse-grained diamond growth surface.

Field-Emission Activation on Boron-Doped Chemical-Vapor-Deposited Polycrystalline Diamond Films

2002 ◽  
Vol 41 (Part 1, No. 5A) ◽  
pp. 3081-3084 ◽  
Author(s):  
Yang-Do Kim ◽  
Woon Choi ◽  
Chae-Hyun Wang ◽  
Toshihiro Ando ◽  
Hyeongtag Jeon ◽  
...  
Keyword(s):  
Field Emission ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Chemical Vapor Deposited

Silver on diamond Schottky diodes formed on boron doped hot‐filament chemical vapor deposited polycrystalline diamond films

1992 ◽  
Vol 61 (9) ◽  
pp. 1119-1121 ◽  
Author(s):  
G. Zhao ◽  
T. Stacy ◽  
E. J. Charlson ◽  
E. M. Charlson ◽  
C. H. Chao ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Chemical Vapor Deposited ◽  
Hot Filament

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Examination of the material properties and performance of thin-diamond film cutting tool inserts produced by arc-jet and hot filament chemical vapor deposition

1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes
Keyword(s):  
Wear Resistance ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Cutting Tool ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
And Performance ◽  
Hot Filament

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.

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