Difference of the electrical properties of screw and 60° dislocations in silicon as detected with temperature‐dependent electron beam induced current technique

1992 ◽  
Vol 61 (7) ◽  
pp. 792-794 ◽  
Author(s):  
Susumu Kusanagi ◽  
Takashi Sekiguchi ◽  
Koji Sumino
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Induced Current ◽  
Temperature Dependent ◽  
Current Technique ◽  
Electron Beam Induced Current

scholarly journals Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 736
Author(s):  
Wei Yi ◽  
Jun Chen ◽  
Takashi Sekiguchi
Keyword(s):  
Electron Beam ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Energy Levels ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Defect Energy ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Study

Electron-beam-induced current (EBIC) and cathodoluminescence (CL) have been applied to investigate the electrical and optical behaviors of dislocations in SrTiO3. The electrical recombination activity and defect energy levels of dislocations have been deduced from the temperature-dependent EBIC measurement. Dislocations contributed to resistive switching were clarified by bias-dependent EBIC. The distribution of oxygen vacancies around dislocations has been obtained by CL mapping. The correlation between switching, dislocation and oxygen vacancies was discussed.

Electron beam induced current technique using a scanning Auger microprobe

1984 ◽  
Vol 55 (7) ◽  
pp. 1129-1131 ◽  
Author(s):  
T. V. Rao ◽  
V. Dutta ◽  
O. S. Sastry ◽  
K. L. Chopra
Keyword(s):  
Electron Beam ◽  
Induced Current ◽  
Current Technique ◽  
Scanning Auger Microprobe ◽  
Electron Beam Induced Current
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