A lower dislocation density substrate is essential for realizing high performance in single-crystal diamond electronic devices. The in-situ tungsten-incorporated homoepitaxial diamond by introducing tungsten hexacarbonyl has been proposed. A 3 × 3 × 0.5 mm3 high-pressure, high-temperature (001) diamond substrate was cut into four pieces with controlled experiments. The deposition of tungsten-incorporated diamond changed the atomic arrangement of the original diamond defects so that the propagation of internal dislocations could be inhibited. The SEM images showed that the etching pits density was significantly decreased from 2.8 × 105 cm−2 to 2.5 × 103 cm−2. The reduction of XRD and Raman spectroscopy FWHM proved that the double-layer tungsten-incorporated diamond has a significant effect on improving the crystal quality of diamond bulk. These results show the evident impact of in situ tungsten-incorporated growth on improving crystal quality and inhibiting the dislocations propagation of homoepitaxial diamond, which is of importance for high-quality diamond growth.
Piezoelectricity of YbAlN films has recently been shown to be almost as high as that of ScAlN films. YbAlN film surface acoustic wave (SAW) resonators are expected to have a high coupling factor. We theoretically investigated the propagation characteristics of first-mode Rayleigh SAWs (RSAWs) on Yb0.33Al0.67N film/high-velocity Si, sapphire, AlN, SiC, BN, and diamond substrates. The first-mode RSAWs on the YbAlN layered structures had high coupling factors, higher than those on ScAlN layered structures. An enhancement of the effective coupling factor of the first mode RSAWs was observed in polarity inverted YbAlN film/BN or diamond substrate structures.
Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.
AbstractThis report explores the effects of machining depth, velocity, temperature, multi-machining, and grain size on the tribological properties of a diamond substrate. The results show that the appearance of graphite atoms can assist the machining process as it reduces the force. Moreover, the number of graphite atoms relies on the machining speed and substrate temperature improvement caused by the friction force. Besides, machining in a machined surface for multi-time is affected by its rough, amorphous, and deformed surface. Therefore, machining in the vertical direction for multi-time leads to a higher rate of deformation but a reduction in the rate of graphite atoms generation. Increasing the grain size could produce a larger graphite cluster, a higher elastic recovery rate, and a higher temperature but a lower force and pile-up height. Because the existence of the grain boundaries hinders the force transformation process, and the reduction in the grain size can soften the diamond substrate material.
Devices based on AlGaN/GaN heterostructures, for example, Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs), have been intensively investigated for applications to high-frequency and high-power areas. Presently, the substrates widely distributed are AlGaN/GaN
on SiC for its high performance in radio frequency (RF) applications, for examples high cutoff frequency (fT) or high maximum oscillation frequency (fmax), and AlGaN/GaN on Si for its high power performance, for examples high breakdown voltage or high voltage
operation. Chemical vapor deposition (CVD) diamond substrates have a thermal conductivity of 12 W/cm·K, and this is a remarkable point because HEMTs or SBDs on AlGaN/GaN on CVD diamonds are one of the promising alternatives for power and RF applications. In comparison, the thermal conductivity
of AlGaN/GaN on a sapphire substrate is 0.33 W/cm·K while that of AlGaN/GaN on a Si substrate is 1.3 W/cm·K and that of AlGaN/GaN on a SiC substrate is 4.9 W/cm·K. In this work, we fabricated SBDs with a 137 mm Schottky channel length on AlGaN/GaN on Si and also on a CVD
diamond substrate. We also compared the thermal behaviors of these fabricated large scale SBDs on Si and a CVD diamond substrate.