Distributed feedback strained layer quantum well heterostructure 980 nm laser fabricated by two‐step metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.108589 ◽

1993 ◽

Vol 62 (8) ◽

pp. 820-822 ◽

Author(s):

T. M. Cockerill ◽

J. Honig ◽

D. V. Forbes ◽

J. J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Distributed Feedback ◽

Strained Layer ◽

Metalorganic Chemical

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1.3 mu m InAs/sub y/P/sub 1/-/sub /y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition

IEEE Journal of Quantum Electronics ◽

10.1109/3.234387 ◽

1993 ◽

Vol 29 (6) ◽

pp. 1528-1535 ◽

Author(s):

A. Kasukawa ◽

T. Namegaya ◽

T. Fukushima ◽

N. Iwai ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Metalorganic Chemical

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1.3 μm InAsyP1−y/InP strained‐layer quantum well laser diodes grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.108163 ◽

1992 ◽

Vol 61 (21) ◽

pp. 2506-2508 ◽

Author(s):

Y. Imajo ◽

A. Kasukawa ◽

T. Namegaya ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Metalorganic Chemical

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InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.100935 ◽

1989 ◽

Vol 54 (6) ◽

pp. 499-501 ◽

Author(s):

P. K. York ◽

K. J. Beernink ◽

G. E. Fernández ◽

J. J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Buried Heterostructure ◽

Metalorganic Chemical

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Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.97258 ◽

1986 ◽

Vol 49 (24) ◽

pp. 1659-1660 ◽

Author(s):

D. Feketa ◽

K. T. Chan ◽

J. M. Ballantyne ◽

L. F. Eastman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Graded Index ◽

Quantum Well Laser ◽

Metalorganic Chemical

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Low threshold 1.3μm InAsP/InP Strained Layer Quantum Well Laser Diodes Grown by Metalorganic Chemical Vapor Deposition

13th IEEE International Semiconductor Laser Conference ◽

10.1109/islc.1992.763636 ◽

2005 ◽

Author(s):

A. Kasukawa ◽

Y. Imajo ◽

T. Namegaya ◽

Y. Hiratani ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Low Threshold ◽

Metalorganic Chemical

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Dependence of threshold current density on quantum well composition for strained‐layer InGaAs‐GaAs lasers by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.101986 ◽

1989 ◽

Vol 55 (25) ◽

pp. 2585-2587 ◽

Author(s):

K. J. Beernink ◽

P. K. York ◽

J. J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Current Density ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Threshold Current ◽

Threshold Current Density ◽

Strained Layer ◽

Metalorganic Chemical

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Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure quantum-well lasers by three-step selective-area metalorganic chemical vapor deposition

IEEE Journal of Quantum Electronics ◽

10.1109/3.283791 ◽

1994 ◽

Vol 30 (2) ◽

pp. 441-445 ◽

Author(s):

T.M. Cockerill ◽

D.V. Forbes ◽

J.A. Dantzig ◽

J.J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Strained Layer ◽

Selective Area ◽

Buried Heterostructure ◽

Metalorganic Chemical

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High power 1.017‐μm strained‐layer quantum well lasers grown by metalorganic chemical‐vapor deposition

Applied Physics Letters ◽

10.1063/1.107306 ◽

1992 ◽

Vol 60 (12) ◽

pp. 1413-1414 ◽

Author(s):

Michio Ohkubo ◽

Tetsuro Ijichi ◽

Akira Iketani ◽

Toshio Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Strained Layer ◽

Metalorganic Chemical

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Metalorganic chemical vapor deposition of InGaAs-GaAs-AlGaAs strained-layer quantum well lasers

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90551-f ◽

1991 ◽

Vol 107 (1-4) ◽

pp. 741-750 ◽

Author(s):

P.K. York ◽

K.J. Beernink ◽

J. Kim ◽

J.J. Alwan ◽

J.J. Coleman ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Strained Layer ◽

Metalorganic Chemical

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Long-wavelength strain-compensated GaAsSb quantum-well heterostructures laser grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.1615312 ◽

2003 ◽

Vol 83 (13) ◽

pp. 2530-2532 ◽

Author(s):

M. S. Noh ◽

R. D. Dupuis ◽

D. P. Bour ◽

G. Walter ◽

N. Holonyak

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Long Wavelength ◽

Metalorganic Chemical

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