Excimer laser ablated barium strontium titanate thin films for dynamic random access memory applications

Applied Physics Letters ◽

10.1063/1.108793 ◽

1993 ◽

Vol 62 (10) ◽

pp. 1056-1058 ◽

Author(s):

D. Roy ◽

S. B. Krupanidhi

Keyword(s):

Excimer Laser ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Random Access ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Access Memory ◽

Barium Strontium ◽

Memory Applications

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Excimer laser ablated strontium titanate thin films for dynamic random access memory applications

Applied Physics Letters ◽

10.1063/1.106938 ◽

1992 ◽

Vol 60 (20) ◽

pp. 2478-2480 ◽

Author(s):

D. Roy ◽

C. J. Peng ◽

S. B. Krupanidhi

Keyword(s):

Excimer Laser ◽

Strontium Titanate ◽

Random Access ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Access Memory ◽

Memory Applications

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Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications

Thin Solid Films ◽

10.1016/0040-6090(94)90093-0 ◽

1994 ◽

Vol 249 (1) ◽

pp. 100-108 ◽

Author(s):

S.B. Krupanidhi ◽

G. Mohan Rao

Keyword(s):

Pulsed Laser Deposition ◽

Strontium Titanate ◽

Random Access ◽

Pulsed Laser ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Laser Deposition ◽

Access Memory ◽

Memory Applications

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(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications

Applied Physics Letters ◽

10.1063/1.124104 ◽

1999 ◽

Vol 74 (21) ◽

pp. 3194-3196 ◽

Author(s):

B. Nagaraj ◽

T. Sawhney ◽

S. Perusse ◽

S. Aggarwal ◽

R. Ramesh ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Access Memory ◽

Memory Applications

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Influence of postdeposition annealing on the enhanced structural and electrical properties of amorphous and crystalline Ta2O5 thin films for dynamic random access memory applications

Journal of Applied Physics ◽

10.1063/1.370817 ◽

1999 ◽

Vol 86 (2) ◽

pp. 871-880 ◽

Author(s):

P. C. Joshi ◽

M. W. Cole

Keyword(s):

Electrical Properties ◽

Random Access ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Access Memory ◽

Structural And Electrical Properties ◽

Memory Applications

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Sputtered ferroelectric thin films for dynamic random access memory applications

Integrated Ferroelectrics ◽

10.1080/10584589308216705 ◽

1993 ◽

Vol 3 (2) ◽

pp. 113-120 ◽

Author(s):

Jack Lee ◽

Vinay Chikarmane ◽

Chandra Sudhama ◽

Jiyoung Kim

Keyword(s):

Random Access ◽

Random Access Memory ◽

Ferroelectric Thin Films ◽

Dynamic Random Access Memory ◽

Access Memory ◽

Memory Applications

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Sol-gel processing SrTiO/sub 3/ thin films for dynamic random access memory applications

9th International Symposium on Electrets (ISE 9) Proceedings ◽

10.1109/ise.1996.578192 ◽

2002 ◽

Author(s):

Qing-Feng Liu ◽

Xin-Shan Li ◽

Zhong-Yan Meng

Keyword(s):

Sol Gel ◽

Random Access ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Access Memory ◽

Memory Applications ◽

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Process monitoring of hemispherical-grained silicon thin films for dynamic random access memory applications

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581905 ◽

1999 ◽

Vol 17 (4) ◽

pp. 1861-1865

Author(s):

Clive Hayzelden ◽

Albert Bivas ◽

Carlos L. Ygartua ◽

Kin-Chung Chan

Keyword(s):

Process Monitoring ◽

Random Access ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Access Memory ◽

Silicon Thin Films ◽

Memory Applications

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(Ba 0.5 Sr 0.5 )TiO 3 thin films prepared by excimer laser method for dynamic random access memory

10.1117/12.408337 ◽

2000 ◽

Author(s):

Hao-shuang Gu ◽

Guang Yang ◽

Jie Zhu ◽

You-qing Wang

Keyword(s):

Excimer Laser ◽

Random Access ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Access Memory ◽

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Electrical characteristics of paraelectric lead lanthanum zirconium titanate thin films for dynamic random access memory applications

Applied Physics Letters ◽

10.1063/1.106486 ◽

1992 ◽

Vol 60 (8) ◽

pp. 1022-1024 ◽

Author(s):

R. E. Jones ◽

P. D. Maniar ◽

J. O. Olowolafe ◽

A. C. Campbell ◽

C. J. Mogab

Keyword(s):

Random Access ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Zirconium Titanate ◽

Electrical Characteristics ◽

Access Memory ◽

Memory Applications

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Highly insulative barium zirconate‐titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications

Applied Physics Letters ◽

10.1063/1.117550 ◽

1996 ◽

Vol 69 (18) ◽

pp. 2659-2661 ◽

Author(s):

T. B. Wu ◽

C. M. Wu ◽

M. L. Chen

Keyword(s):

Magnetron Sputtering ◽

Random Access ◽

Random Access Memory ◽

Rf Magnetron Sputtering ◽

Dynamic Random Access Memory ◽

Barium Zirconate ◽

Access Memory ◽

Barium Zirconate Titanate ◽

Memory Applications

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