Coulomb blockade in the inversion layer of a Si metal‐oxide‐semiconductor field‐effect transistor with a dual‐gate structure

1994 ◽  
Vol 64 (5) ◽  
pp. 586-588 ◽  
Author(s):  
Hideyuki Matsuoka ◽  
Tsuneo Ichiguchi ◽  
Toshiyuki Yoshimura ◽  
Eiji Takeda
1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.


1998 ◽  
Vol 37 (Part 1, No. 11) ◽  
pp. 5926-5931
Author(s):  
Masahiro Shimizu ◽  
Takashi Kuroi ◽  
Masahide Inuishi ◽  
Hideaki Arima ◽  
Haruhiko Abe ◽  
...  

1997 ◽  
Vol 36 (Part 1, No. 12B) ◽  
pp. 7736-7740 ◽  
Author(s):  
Seigo Kanemaru ◽  
Ken Ozawa ◽  
Keigo Ehara ◽  
Takayuki Hirano ◽  
Hisao Tanoue ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document