Coulomb blockade in the inversion layer of a Si metal‐oxide‐semiconductor field‐effect transistor with a dual‐gate structure
1997 ◽
Vol 36
(Part 1, No. 6B)
◽
pp. 4139-4142
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1998 ◽
Vol 37
(Part 1, No. 11)
◽
pp. 5926-5931
1997 ◽
Vol 36
(Part 1, No. 12B)
◽
pp. 7736-7740
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Keyword(s):
2000 ◽
Vol 28
(5-6)
◽
pp. 477-483
◽
2014 ◽
Vol 11
(8)
◽
pp. 1193-1200