High-field quantum transport in the inversion layer of a metal–oxide–semiconductor field effect transistor

2003 ◽  
Vol 93 (8) ◽  
pp. 4616-4621
Author(s):  
Husam H. Abu-Safe
1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.


2003 ◽  
Vol 93 (2) ◽  
pp. 1230-1240 ◽  
Author(s):  
M. D. Croitoru ◽  
V. N. Gladilin ◽  
V. M. Fomin ◽  
J. T. Devreese ◽  
W. Magnus ◽  
...  

2004 ◽  
Vol 96 (4) ◽  
pp. 2305-2310 ◽  
Author(s):  
M. D. Croitoru ◽  
V. N. Gladilin ◽  
V. M. Fomin ◽  
J. T. Devreese ◽  
W. Magnus ◽  
...  

2007 ◽  
Vol 91 (10) ◽  
pp. 103510 ◽  
Author(s):  
Vijay K. Arora ◽  
Michael L. P. Tan ◽  
Ismail Saad ◽  
Razali Ismail

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