Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor
Keyword(s):
It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.
2009 ◽
Vol 48
(4)
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pp. 04C035
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2021 ◽
Vol 134
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pp. 106046
Keyword(s):
2020 ◽
Vol 21
(3)
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pp. 339-347
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1997 ◽
Vol 9
(8)
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pp. 1143-1145
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