In situlaser‐induced fluorescence studies of laser chemical vapor deposition of TiN thin films

1994 ◽  
Vol 65 (3) ◽  
pp. 298-300 ◽  
Author(s):  
Xiangli Chen ◽  
Jyoti Mazumder
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Laser Chemical Vapor Deposition ◽  
Fluorescence Studies ◽  
Tin Thin Films

scholarly journals Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
P. Haniam ◽  
C. Kunsombat ◽  
S. Chiangga ◽  
A. Songsasen
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Cobalt Oxides ◽  
Fractal Structures ◽  
Laser Chemical Vapor Deposition ◽  
Diffusion Limited Aggregation ◽  
Diffusion Limited

Thin films of cobalt oxides (CoO and Co3O4) fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures.

Laser chemical vapor deposition of cobalt thin films

1992 ◽  
Vol 72 (8) ◽  
pp. 3480-3484 ◽  
Author(s):  
K. Schulmeister ◽  
J. G. Lunney ◽  
B. Buckley
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Laser Chemical Vapor Deposition ◽  
Cobalt Thin Films

Low Temperature Chemical Vapor Deposition of Titanium Nitride Thin Films With Hydrazine and Tetrakis-(dimethylamide)Titanium

1999 ◽  
Vol 606 ◽  
Author(s):  
Carmela Amato-Wierda ◽  
Edward T. Norton ◽  
Derk A. Wierda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Air Exposure ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Reducing Ability ◽  
Tin Thin Films

AbstractHydrazine and tetrakis-(dimethylamido)titanium have been used as precursors for the low temperature chemical vapor deposition of TiN thin films between 50°C and 200°C at growth rates between 5 to 35 nm/min. At hydrazine to TDMAT ratios of 50:1 and 100:1 the resulting films show an increase in the Ti:N ratio with increasing deposition temperature. They contain 2% carbon, and varying amounts of oxygen up to 36% as a result of diffusion after air exposure. The low temperature growth is improved when hydrazine-ammonia mixtures containing as little as 1.9% hydrazine are used. Their Ti:N ratio is almost 1:1 and they contain no carbon or oxygen according to RBS. The TiN films grown from pure hydrazine or the hydrazine-ammonia mixture have some crystallinity according to x-ray diffraction and their resistivity is on the order of 104µω cm. The low temperature growth is attributed to the weak N–N bond in hydrazine and its strong reducing ability. In these films, the Ti:N ratio is approximately 1:1.

scholarly journals Preparation of rutile TiO2 thin films by laser chemical vapor deposition method

2013 ◽  
Vol 2 (2) ◽  
pp. 162-166 ◽  
Author(s):  
Dongyun Guo ◽  
Akihiko Ito ◽  
Takashi Goto ◽  
Rong Tu ◽  
Chuanbin Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Laser Chemical Vapor Deposition ◽  
Tio2 Thin Films ◽  
Rutile Tio2
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