Design considerations for the construction of a reflecting symmetric multipass cell for use in laser molecular‐beam experiments

1987 ◽  
Vol 58 (12) ◽  
pp. 2238-2243 ◽  
Author(s):  
P. G. Lethbridge ◽  
A. J. Stace
Keyword(s):  
Molecular Beam ◽  
Multipass Cell ◽  
Design Considerations

Uniformity Control in Elemental Vapor Transport Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
A. I. Gurary ◽  
G. S. Tompa ◽  
R. A. Stall ◽  
S. Liang ◽  
Y. Lu ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Flux Distribution ◽  
Response Times ◽  
Vapor Transport ◽  
The Novel ◽  
Operational Parameters ◽  
Design Considerations ◽  
Elemental Flux ◽  
High Level ◽  
Good Agreement

ABSTRACTElemental Vapor Transport Epitaxy (EVTE) is a novel technique for semiconductor manufacturing, which combines the advantages of Molecular Beam Epitaxy (MBE) and Vapor Phase Epitaxy (VPE). EVTE provides a high level of elemental flux control, scaling to large deposition areas, and elimination of elemental Ga source related oval defects. EVTE has been successfully applied to the deposition of III-V and II-VI thin films and heterostructures. Design considerations and evaluations of the novel EVTE elements: elemental flux regulating valve operating at temperatures >1250°C with demonstrated response times less than 1 second and elemental flux distribution manifold are presented. The calculated operational parameters for EVTE are in good agreement with the observed experimental results.

Multipass cell for molecular beam absorption spectroscopy

1990 ◽  
Vol 29 (1) ◽  
pp. 119 ◽  
Author(s):  
Devinder Kaur ◽  
A. M. de Souza ◽  
J. Wanna ◽  
Sameer A. Hammad ◽  
Louis Mercorelli ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Molecular Beam ◽  
Multipass Cell

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

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