Frequency‐stabilized single‐mode cw 118.8‐μm CH3OH waveguide laser for large tokamak diagnostics

1989 ◽  
Vol 60 (6) ◽  
pp. 1080-1085 ◽  
Author(s):  
Takeshi Fukuda ◽  
Akira Nagashima
Keyword(s):  
2003 ◽  
Vol 82 (9) ◽  
pp. 1332-1334 ◽  
Author(s):  
Pratheepan Madasamy ◽  
S. Honkanen ◽  
D. F. Geraghty ◽  
N. Peyghambarian

Author(s):  
N. Tolstik ◽  
A. G. Okhrimchuk ◽  
M. P. Smayev ◽  
V. V. Likhov ◽  
E. Sorokin ◽  
...  

Author(s):  
Paddy K. L. Chan ◽  
Amul D. Sathe ◽  
Kevin P. Pipe ◽  
Jason J. Plant ◽  
Reuel B. Swint ◽  
...  

Nonradiative power dissipation within and near the active region of a high power single mode slab coupled optical waveguide laser is directly measured by CCD-based thermoreflectance, including its variation with device bias. By examining the high spatial resolution temperature profile at the optical output facets, we quantify heat spreading from the source in the active region both downward to the substrate and upward to the metal top contact.


1968 ◽  
Vol 56 (2) ◽  
pp. 195-196 ◽  
Author(s):  
R.P. Flam ◽  
E.R. Schineller

ETRI Journal ◽  
2008 ◽  
Vol 30 (3) ◽  
pp. 480-482 ◽  
Author(s):  
Su Hwan Oh ◽  
Ki Soo Kim ◽  
Oh Kee Kwon ◽  
Kwang Ryong Oh

1996 ◽  
Vol 8 (9) ◽  
pp. 1130-1132 ◽  
Author(s):  
V. Vusirikala ◽  
B.P. Gopalan ◽  
S. Kareenahalli ◽  
S.A. Merritt ◽  
M. Dagenais ◽  
...  

1991 ◽  
Vol 240 ◽  
Author(s):  
Mark A. Rothman ◽  
John A. Thompson ◽  
Craig A. Armiento

ABSTRACTThe fabrication of devices based on III-V materials often requires a number of different reactive ion etching (RIE) processes that must be implemented sequentially. These processes are typically carried out in different RIE systems to avoid cross contamination. In this paper, we describe a multichamber RIE system configured to provide several sequential etch processes required for the fabrication of optoelectronic devices. This system has been used to fabricate InGaAsP/lnP ridge waveguide laser arrays with etched mechanical features that enable passive alignment of the lasers with single-mode fibers. Laser arrays with threshold currents as low as 20 mA have been processed with a high degree of uniformity. This system has also been used to develop a laser facet etch process based on CH4/H2/Ar chemistry. This process has been used to fabricate lasers with monolithically integrated rear facet monitors. These etched facet lasers have threshold currents comparable to lasers with both facets cleaved.


1980 ◽  
Vol 16 (2) ◽  
pp. 75
Author(s):  
I.P. Kaminow ◽  
R.E. Nahory ◽  
M.A. Pollack ◽  
L.W. Stulz ◽  
J.C. Dewinter

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