Solid‐state reaction in Pd/ZnSe thin film contacts

1995 ◽  
Vol 67 (7) ◽  
pp. 947-949 ◽  
Author(s):  
K. J. Duxstad ◽  
E. E. Haller ◽  
K. M. Yu ◽  
E. D. Bourret ◽  
J. M. Walker ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Reaction

Solid-state reaction process for high-quality organometallic halide perovskite thin film

2021 ◽  
Vol 227 ◽  
pp. 111014
Author(s):  
Chien-Chung Hsu ◽  
Sheng-Min Yu ◽  
Kun-Mu Lee ◽  
Chuan-Jung Lin ◽  
Hao-Chien Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Reaction ◽  
Reaction Process ◽  
High Quality ◽  
Halide Perovskite

Solid-state reaction of electroplated thin film Au/Sn couple at low temperatures

2015 ◽  
Vol 619 ◽  
pp. 325-331 ◽  
Author(s):  
H. Xu ◽  
V. Vuorinen ◽  
H. Dong ◽  
M. Paulasto-Kröckel
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Reaction ◽  
Low Temperatures

Photocurrent Enhancement for Ti-Doped Fe2O3 Thin Film Photoanodes by an In Situ Solid-State Reaction Method

2013 ◽  
Vol 5 (4) ◽  
pp. 1310-1316 ◽  
Author(s):  
Chunhui Miao ◽  
Tongfei Shi ◽  
Guoping Xu ◽  
Shulin Ji ◽  
Changhui Ye
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Reaction ◽  
Solid State Reaction Method ◽  
Reaction Method ◽  
Fe2o3 Thin Film

Solid state reaction crystallization and amorphization on thin film Fe-Zr multilayers

1994 ◽  
Vol 83 (1) ◽  
pp. 333-339 ◽  
Author(s):  
A. Paesano ◽  
S. R. Teixeira ◽  
L. Amaral
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Reaction

Decagonal Al3Pd Phase Formation in Lateral and Conventional Thin Film Al/Pd Diffusion Couples.

1990 ◽  
Vol 187 ◽  
Author(s):  
B. Blanpain ◽  
J.W. Mayer
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Phase Formation ◽  
Solid State Reaction ◽  
Initial Growth ◽  
Diffusion Couples ◽  
Decagonal Phase

AbstractWe show that the decagonal Al3Pd phase can be formed by solid state reaction in lateral and conventional thin film couples of Al and Pd. The metastable decagonal phase forms after the initial growth of the Al3Pd2 compound.

Kinetics of the solid-state reaction for the formation of amorphous ZrCo studied by electrical conductance measurements

1988 ◽  
Vol 3 (3) ◽  
pp. 461-465 ◽  
Author(s):  
H. Schröder ◽  
K. Samwer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Solid State ◽  
Solid State Reaction ◽  
Linear Time ◽  
Electrical Conductance ◽  
Reaction Times ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Kinetics Of

Thin-film reactions of Co with Zr have been studied in the temperature range between 473 and 523 K by electrical conductance measurements and cross-sectional transmission electron microscopy (CS-TEM). The reduction of the electrical conductance during the solid state reaction is explained by formation and growth of an amorphous phase at every Zr/Co interface. For long reaction times the growth of the layer thickness follows a shifted $\sqrt t$ law. For short reaction times the measurements show a linear time law, which is expected for an interface limited reaction.

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