AbstractThe presence of point defects is expected to influence the properties of free carrier in semiconductors. We have used the techniques of ultrafast laser spectroscopy to characterize the dynamics of photoinjected carriers in several III–V semiconductors grown at low temperature. The initial scattering time and the lifetime of the carriers become very short at low growth temperatures. Results obtained with low-temperature grown III–Vs are compared to those obtained with III–Vs grown at normal temperatures and amorphous silicon.
