The Ultrafast Carrier Dynamics in Semiconductors: The Role of Defects

1995 ◽  
Vol 378 ◽  
Author(s):  
P. M. Fauchet ◽  
G. W. Wicks ◽  
Y. Kostoulas ◽  
A. I. Lobad ◽  
K. B. Ucer
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Free Carrier ◽  
Carrier Dynamics ◽  
Ultrafast Laser ◽  
Ultrafast Laser Spectroscopy ◽  
Ultrafast Carrier ◽  
Scattering Time

AbstractThe presence of point defects is expected to influence the properties of free carrier in semiconductors. We have used the techniques of ultrafast laser spectroscopy to characterize the dynamics of photoinjected carriers in several III–V semiconductors grown at low temperature. The initial scattering time and the lifetime of the carriers become very short at low growth temperatures. Results obtained with low-temperature grown III–Vs are compared to those obtained with III–Vs grown at normal temperatures and amorphous silicon.

Terahertz Generation Study of Ultrafast Carrier Dynamics in Polycrystalline Low-Temperature GaAs

2003 ◽  
Vol 93 ◽  
pp. 367-374
Author(s):  
N. Kawasaki ◽  
Takeshi Yoshimura ◽  
Masayoshi Tonouchi ◽  
M. Tani ◽  
Kazufumi Sakai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Dynamics ◽  
Terahertz Generation ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Low Temperature Gaas

Influence of Be Doping on Material Properties of Low-Temperature-Grown GaAs

2002 ◽  
Vol 719 ◽  
Author(s):  
Saulius Marcinkevièius ◽  
Andreas Gaarder ◽  
Jörg Siegert ◽  
Jean-Fraņois Roux ◽  
Jean-Louis Coutaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Material Properties ◽  
Doping Level ◽  
Carrier Dynamics ◽  
Electron Trapping ◽  
Structural Quality ◽  
Trapping Time ◽  
Ultrafast Carrier ◽  
Antisite Defects ◽  
Low Temperature Grown Gaas

AbstractA number of experimental techniques were used to characterize structural quality, ultrafast carrier dynamics and deep center properties of low-temperature-grown GaAs doped with Be. GaAs layers grown at 280 °C, doped with the Be concentration from 5×1017 cm-3 to 2×1019 cm-3 and annealed at temperatures between 500 and 800 °C were studied. Electron trapping times in these samples varied from hundreds of femtoseconds to several picoseconds. A non-monotonous electron trapping time dependence on Be doping level is explained by the influence of triple-charged gallium vacancies and single-charged Be-acceptors on the number of ionized As antisite defects.

Ultrafast carrier dynamics in core and core/shell CdSe quantum rods: Role of the surface and interface defects

2005 ◽  
Vol 72 (12) ◽  
Author(s):  
Arianna Cretí ◽  
Marco Anni ◽  
Margherita Zavelani Rossi ◽  
Guglielmo Lanzani ◽  
Gabriella Leo ◽  
...  
Keyword(s):  
Carrier Dynamics ◽  
Core Shell ◽  
Ultrafast Carrier Dynamics ◽  
Surface And Interface ◽  
Quantum Rods ◽  
Interface Defects ◽  
Ultrafast Carrier

Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers

2017 ◽  
Vol 31 (27) ◽  
pp. 1750195 ◽  
Author(s):  
D. I. Khusyainov ◽  
C. Dekeyser ◽  
A. M. Buryakov ◽  
E. D. Mishina ◽  
G. B. Galiev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
High Resistivity ◽  
Ultrafast Carrier Dynamics ◽  
Si Doping ◽  
Ultrafast Optical ◽  
Donor And Acceptor ◽  
Ultrafast Carrier ◽  
Lt Gaas

We characterized the ultrafast properties of LT-GaAs doped with silicon [Formula: see text]-layers and introduced delta-doping ([Formula: see text]-doping) as efficient method for enhancing the properties of GaAs-based structures which can be useful for terahertz (THz) antenna, ultrafast switches and other high frequency applications. Low temperature grown GaAs (LT-GaAs) became one of the most promising materials for ultrafast optical and THz devices due to its short carrier lifetime and high carrier mobility. Low temperature growth leads to a large number of point defects and an excess of arsenic. Annealing of LT-GaAs creates high resistivity through the formation of As-clusters, which appear due to the excess of arsenic. High resistivity is very important for THz antennas so that voltage can be applied without the risk of breakdown. With [Formula: see text]-Si doping, control of As-clusters is possible, since after annealing, clusters align in the plane where the [Formula: see text]-doping occurs. In this paper, we compare the properties of LT-GaAs-based planar structures with and without [Formula: see text]-Si doping and subsequent annealing. We used pump-probe transient reflectivity as a probe for ultrafast carrier dynamics in LT-GaAs. The results of the experiment were interpreted using the Ortiz model and show that the [Formula: see text]-Si doping increases deep donor and acceptor concentrations and decreases the photoinduced carrier lifetime as compared with LT-GaAs with same growth and annealing temperatures, but without doping.

Ultrafast Carrier Dynamics in Hematite Films: The Role of Photoexcited Electrons in the Transient Optical Response

2014 ◽  
Vol 118 (41) ◽  
pp. 23621-23626 ◽  
Author(s):  
Shayne Sorenson ◽  
Eric Driscoll ◽  
Shima Haghighat ◽  
Jahan M. Dawlaty
Keyword(s):  
Optical Response ◽  
Carrier Dynamics ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier
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