Kinetics of strain relaxation through misfit dislocation formation in the growth of epitaxial films on compliant substrates

ABSTRACTThe mechanisms and kinetics of forming misfit dislocations in heteroepitaxial films are studied. The critical thickness for misfit dislocation formation can be found by considering the incremental extension of a misfit dislocation by the movement of a “threading” dislocation segment that extends from the film/substrate interface to the free surface of the film. This same mechanism allows one to examine the kinetics of dislocation motion and to illuminate the importance of dislocation nucleation and multiplication in strain relaxation. The effects of unstrained epitaxial capping layers on these processes are also considered. The major effects of such capping layers are to inhibit dislocation nucleation and multiplication. The effect of the capping layer on the velocity of the “threading” dislocation is shown to be small by comparison.A new substrate curvature technique for measuring the strain and studying the kinetics of strain relaxation in heteroepitaxial films is also briefly described.

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Kinetics of strain relaxation through misfit dislocation formation in InAs/GaAs(111)A heteroepitaxy

Surface Science ◽

10.1016/s0039-6028(99)00852-3 ◽

1999 ◽

Vol 441 (2-3) ◽

pp. L911-L916 ◽

Cited By ~ 13

Author(s):

Luis A. Zepeda-Ruiz ◽

Brett Z. Nosho ◽

Rodney I. Pelzel ◽

W.Henry Weinberg ◽

Dimitrios Maroudas

Keyword(s):

Misfit Dislocation ◽

Strain Relaxation ◽

Kinetics Of ◽

Dislocation Formation

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A model of strain relaxation in hetero-epitaxial films on compliant substrates

Applied Physics A ◽

10.1007/s003390050631 ◽

1998 ◽

Vol 66 (1) ◽

pp. 13-22 ◽

Cited By ~ 27

Author(s):

G. Kästner ◽

U. Gösele ◽

T.Y. Tan

Keyword(s):

Strain Relaxation ◽

Epitaxial Films ◽

Compliant Substrates

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The Roles of Stress, Geometry and Orientation on Misfit Dislocations Kinetics and Energetics in Epitaxial Strained Layers.

MRS Proceedings ◽

10.1557/proc-239-379 ◽

1991 ◽

Vol 239 ◽

Cited By ~ 3

Author(s):

R. Hull ◽

J. C. Bean ◽

F. Ross ◽

D. Bahnck ◽

L. J. Pencolas

Keyword(s):

Misfit Dislocation ◽

Lattice Mismatch ◽

Strain Relaxation ◽

Misfit Dislocations ◽

Slip Systems ◽

Strained Layers ◽

Burgers Vector ◽

Partial Dislocations ◽

Strain Stress ◽

Kinetics Of

ABSTRACTThe geometries, microstructures, energetics and kinetics of misfit dislocations as functions of surface orientation and the magnitude of strain/stress are investigated experimentally and theoretically. Examples are drawn from (100), (110) and (111) surfaces and from the GexSi1–x/Si and InxGa1–x/GaAs systems. It is shown that the misfit dislocation geometries and microstructures at lattice mismatch stresses < - 1GPa may in general be predicted by operation of the minimum magnitude Burgers vector slipping on the widest spaced planes. At stresses of the order several GPa, however, new dislocation systems may become operative with either modified Burgers vectors or slip systems. Dissociation of totál misfit dislocations into partial dislocations is found to play a crucial role in strain relaxation, on surfaces other than (100) under compressive stress.

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Strain Relaxation in Misfitting Transition Metal Dichalcogenide Monolayer Superlattices: Wrinkling vs Misfit Dislocation Formation

Nano Letters ◽

10.1021/acs.nanolett.9b03425 ◽

2019 ◽

Vol 19 (12) ◽

pp. 8724-8731 ◽

Cited By ~ 2

Author(s):

Yang Xia ◽

Ryan S. Davis ◽

Mikko P. Haataja

Keyword(s):

Transition Metal ◽

Misfit Dislocation ◽

Strain Relaxation ◽

Transition Metal Dichalcogenide ◽

Dislocation Formation

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An atomistically validated continuum model for strain relaxation and misfit dislocation formation

Journal of the Mechanics and Physics of Solids ◽

10.1016/j.jmps.2016.03.015 ◽

2016 ◽

Vol 91 ◽

pp. 265-277 ◽

Cited By ~ 16

Author(s):

X.W. Zhou ◽

D.K. Ward ◽

J.A. Zimmerman ◽

J.L. Cruz-Campa ◽

D. Zubia ◽

...

Keyword(s):

Misfit Dislocation ◽

Continuum Model ◽

Strain Relaxation ◽

Dislocation Formation

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Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.115501 ◽

2015 ◽

Vol 54 (11) ◽

pp. 115501 ◽

Cited By ~ 6

Author(s):

Motoaki Iwaya ◽

Taiji Yamamoto ◽

Daisuke Iida ◽

Yasunari Kondo ◽

Mihoko Sowa ◽

...

Keyword(s):

Dislocation Density ◽

Misfit Dislocation ◽

Threading Dislocation ◽

Threading Dislocation Density ◽

Dislocation Formation

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Development of Cross-Hatch Morphology During Growth of Lattice Mismatched Layers

MRS Proceedings ◽

10.1557/proc-673-p5.2 ◽

2001 ◽

Vol 673 ◽

Author(s):

A. Maxwell Andrews ◽

J.S. Speck ◽

A.E. Romanov ◽

M. Bobeth ◽

W. Pompe

Keyword(s):

Misfit Dislocation ◽

Film Growth ◽

Strain Relaxation ◽

Dislocation Generation ◽

Force Microscopy ◽

Step Flow ◽

Atomic Force ◽

Subsequent Step ◽

Step Flow Growth ◽

Lateral Scale

ABSTRACTAn approach is developed for understanding the cross-hatch morphology in lattice mismatched heteroepitaxial film growth. It is demonstrated that both strain relaxation associated with misfit dislocation formation and subsequent step elimination (e.g. by step-flow growth) are responsible for the appearance of nanoscopic surface height undulations (0.1-10 nm) on a mesoscopic (∼100 nm) lateral scale. The results of Monte Carlo simulations for dislocation- assisted strain relaxation and subsequent film growth predict the development of cross-hatch patterns with a characteristic surface undulation magnitude ∼50 Å in an approximately 70% strain relaxed In0.25Ga0.75As layers. The model is supported by atomic force microscopy (AFM) observations of cross-hatch morphology in the same composition samples grown well beyond the critical thickness for misfit dislocation generation.

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