Structural study of single Shockley stacking faults terminated near substrate/epilayer interface in 4H-SiC

Structural analysis is carried out of a single Shockley stacking fault (1SSF) that terminates near the substrate/epilayer interface and originally expanded from a basal plane dislocation segment near the epilayer surface of 4H-SiC. The characteristic zigzag structure is found for the partial dislocations (PDs), with microscopic connecting angles of almost 120°. It has been suggested that the microscopic construction of PDs might be limited by the Peierls valley. The termination line near the substrate/epilayer interface was found to have 30° Si-core and 90° Si-core PDs. This combination is the same as that found near the surface of the epilayer in commonly observed 1SSFs. Penetrating BPDs of this kind were also found experimentally for the first time. For the currently proposed charts for the 1SSF expansions, photoluminescence imaging during UV illumination is one of the nondestructive analysis methods that can provide the structural information and expected expansion shapes of the 1SSFs.

THE INFLUENCE OF X-RAY IRRADIATION ON DYNAMICAL AND STRUCTURAL CHARACTERISTICS OF STRAINED NaCl CRYSTALS

The influence of a preliminary deformation ε = 1,3% and X-ray irradiation to exposure doses 0…600 R on the frequency spectra of the dislocation ultrasonic absorption ∆d(f) in NaCl crystals in the frequency interval 37,5…232,5 MHz and at room temperature has been studied using the pulsed technique. From the frequency curves, taken from crystals with different doses of radiation, the dependencies of the viscosity coefficient B and the average effective length of the dislocation segment L from the dose of irradiation has been determined. The coefficient of dynamic viscosity B was found to be independent of the irradiation dose.

Дислокационные реакции в полуполярном слое GaN, выращенном на вицинальной подложке Si(001) с использованием буферных слоев AlN и 3C-SiC

The interaction between a+c-type and a-type dislocations in thick (up to 14 µm) semipolar GaN layer grown by hydride vapor phase epitaxy on a 3C SiC/Si(001) template has been detailed investigated by means of transmission electron microscopy. It is shown, that the expansion of a dislocation half loop with Burgers vector b=1/3<1-210> during cooling process can be blocked by its reaction with a threading dislocation with b=1/3<1-210> to form a dislocation segment with b=<0001>. This dislocation reaction is discussed in terms of the energy relaxation. The approximation estimate made within the linear tension approach gives the total energy gain ~7.6 eV/Å (that is, in general, ~45.6 keV for the observed screw dislocation segment of length 600 nm formed as a result of the reaction). Using the core energy calculations, the dislocation core contribution was also estimated as ~19.1 keV.

The Study of Nanosized Cu–Mn Precipitates Contribution to Hardening in Body Centered Cubic Fe Matrix

In order to study the contribution of manganese (Mn) atoms in copper (Cu) precipitates to hardening in body centered cubic (BCC) structure iron (Fe) matrix, the interactions of a 1/2 〈111〉 {110} edge dislocations with nanosized Cu and Cu–Mn precipitates in BCC Fe have been investigated by using molecular dynamics method (MD). The results indicate that the critical resolved shear stresses (τc) of the Cu–Mn precipitates are larger than that of Cu precipitates. Meanwhile, τc of the Cu–Mn precipitates show a much more significant dependence on temperature and size compared to Cu precipitates. Mn atoms exhibit strong attraction to dislocation segment in Cu precipitate and improve the fraction of transformed atoms from BCC phase to nine rhombohedron (R) phase for big size precipitates. Those all lead to the higher resistance to the dislocation glide. Eventually, these features confirmed that the appearance of Mn atoms in Cu precipitates greatly facilitates the hardening in BCC Fe matrix.