ABSTRACTThe mechanisms and kinetics of forming misfit dislocations in heteroepitaxial films are studied. The critical thickness for misfit dislocation formation can be found by considering the incremental extension of a misfit dislocation by the movement of a “threading” dislocation segment that extends from the film/substrate interface to the free surface of the film. This same mechanism allows one to examine the kinetics of dislocation motion and to illuminate the importance of dislocation nucleation and multiplication in strain relaxation. The effects of unstrained epitaxial capping layers on these processes are also considered. The major effects of such capping layers are to inhibit dislocation nucleation and multiplication. The effect of the capping layer on the velocity of the “threading” dislocation is shown to be small by comparison.A new substrate curvature technique for measuring the strain and studying the kinetics of strain relaxation in heteroepitaxial films is also briefly described.
An atomistically validated continuum model for strain relaxation and misfit dislocation formation
