Valence-band structure of wurtzite GaN including the spin-orbit interaction

1999 ◽  
Vol 74 (8) ◽  
pp. 1117-1119 ◽  
Author(s):  
G. B. Ren ◽  
Y. M. Liu ◽  
P. Blood
2013 ◽  
Vol 102 (18) ◽  
pp. 182902 ◽  
Author(s):  
Manish Kumar ◽  
R. J. Choudhary ◽  
D. M. Phase

2005 ◽  
Vol 112 (1-4) ◽  
pp. 66-70 ◽  
Author(s):  
Hayato Kamioka ◽  
Hidenori Hiramatsu ◽  
Masahiro Hirano ◽  
Kazushige Ueda ◽  
Toshio Kamiya ◽  
...  

2009 ◽  
Vol 16 (05) ◽  
pp. 689-696
Author(s):  
M. GUNES ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
K. AKGUNGOR ◽  
I. SÖKMEN

Valence band structure with spin–orbit (SO) coupling of GaAs/Ga 1-x Al x As square quantum well (SQW) under the electric field by a calculation procedure based on a finite element method (FEM) is investigated using the multiband effective mass theory ([Formula: see text] method). The validity of the method is confirmed with the results of D. Ahn, S. L. Chuang and Y. C. Chang (J. Appl. Phys.64 (1998) 4056), who calculated valence band structure, using axial approximation for Luttinger–Kohn Hamiltonian and finite difference method. Our results demonstrated that SO coupling and electric field have significant effects on the valence band structure.


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