Field emission from tetrahedral amorphous carbon as a function of surface treatment and substrate material

1999 ◽  
Vol 74 (11) ◽  
pp. 1594-1596 ◽  
Author(s):  
A. Hart ◽  
B. S. Satyanarayana ◽  
W. I. Milne ◽  
J. Robertson
1998 ◽  
Vol 7 (2-5) ◽  
pp. 656-659 ◽  
Author(s):  
B.S. Satyanarayana ◽  
A. Hart ◽  
W.I. Milne ◽  
J. Robertson

1999 ◽  
Vol 142 (1-4) ◽  
pp. 521-526 ◽  
Author(s):  
Jon-Lian Kwo ◽  
Meiso Yokoyama ◽  
I-Nan Lin

2001 ◽  
Vol 675 ◽  
Author(s):  
B.S. Satyanarayana ◽  
H. Takahashi ◽  
T. Narusawa ◽  
A. Hiraki

ABSTRACTReported here is a study on the effect of different metal back contacts onthe electrical and structural properties of the tetrahedral amorphous carbon (ta-C). The films were grown using a pulsed cathodic arc system. Ta-C films were deposited simultaneously on silicon substrate, precoated with the following metals, namely aluminium (Al), gold (Au), chromium(Cr), molybdenum (Mo), copper (Cu), tungsten (W) and titanium(Ti). The electrical measurements and Raman response show that the back contact does influence the properties of ta-C films. These results are analysed with respect to our earlier report regarding the influence of back contacts on field emission from similar ta-C films.


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