Effect of surface treatment and back contact material on field emission from tetrahedral amorphous carbon

1999 ◽  
Vol 8 (2-5) ◽  
pp. 809-813 ◽  
Author(s):  
A Hart ◽  
B.S Satyanarayana ◽  
W.I Milne ◽  
J Robertson
Keyword(s):  
Surface Treatment ◽  
Field Emission ◽  
Amorphous Carbon ◽  
Back Contact ◽  
Contact Material ◽  
Tetrahedral Amorphous Carbon ◽  
Effect Of Surface

Field emission from tetrahedral amorphous carbon as a function of surface treatment and substrate material

1999 ◽  
Vol 74 (11) ◽  
pp. 1594-1596 ◽  
Author(s):  
A. Hart ◽  
B. S. Satyanarayana ◽  
W. I. Milne ◽  
J. Robertson
Keyword(s):  
Surface Treatment ◽  
Field Emission ◽  
Amorphous Carbon ◽  
Substrate Material ◽  
Tetrahedral Amorphous Carbon

Effect of Metal Back Contacts on Tetrahedral Amorphous Carbonc Films Grown Using the Cathodic Arc Process.

2001 ◽  
Vol 675 ◽  
Author(s):  
B.S. Satyanarayana ◽  
H. Takahashi ◽  
T. Narusawa ◽  
A. Hiraki
Keyword(s):  
Structural Properties ◽  
Field Emission ◽  
Amorphous Carbon ◽  
Silicon Substrate ◽  
Back Contact ◽  
Electrical Measurements ◽  
Tetrahedral Amorphous Carbon ◽  
Raman Response ◽  
Cathodic Arc ◽  
Metal Back

ABSTRACTReported here is a study on the effect of different metal back contacts onthe electrical and structural properties of the tetrahedral amorphous carbon (ta-C). The films were grown using a pulsed cathodic arc system. Ta-C films were deposited simultaneously on silicon substrate, precoated with the following metals, namely aluminium (Al), gold (Au), chromium(Cr), molybdenum (Mo), copper (Cu), tungsten (W) and titanium(Ti). The electrical measurements and Raman response show that the back contact does influence the properties of ta-C films. These results are analysed with respect to our earlier report regarding the influence of back contacts on field emission from similar ta-C films.

Field emission from tetrahedral amorphous carbon

1998 ◽  
Vol 7 (2-5) ◽  
pp. 656-659 ◽  
Author(s):  
B.S. Satyanarayana ◽  
A. Hart ◽  
W.I. Milne ◽  
J. Robertson
Keyword(s):  
Field Emission ◽  
Amorphous Carbon ◽  
Tetrahedral Amorphous Carbon

Field Emission from Carbon Films Deposited by VHF CVD on Different Substrates

1999 ◽  
Vol 558 ◽  
Author(s):  
A.I. Kosarev ◽  
A.S. Abramov ◽  
A.J. Vinogradov ◽  
M.V. Shutov ◽  
T.E. Felter ◽  
...  
Keyword(s):  
Work Function ◽  
Field Emission ◽  
Low Temperatures ◽  
Carbon Films ◽  
Emission Characteristics ◽  
Back Contact ◽  
Contact Material ◽  
Si Substrates

ABSTRACTAs previously demonstrated, non-diamond carbon (NDC) films deposited at low temperatures 200-300 °C on silicon tips reduced the threshold of field emission. In this paper we will present the results of the study of field emission from flat NDC films prepared by VHF CVD. Emission measurements were performed in a diode configuration at approximately 10−10 Torr. NDC films were deposited on ceramic and on c-Si substrates sputter coated with layers of Ti, Cu, Ni and Pt. The back contact material influences the emission characteristics but not as a direct correlation to work function. A model of field emission from metal-NDC film structures will be discussed.

Effects of composition on field emission character of tetrahedral amorphous carbon

1999 ◽  
Vol 142 (1-4) ◽  
pp. 521-526 ◽  
Author(s):  
Jon-Lian Kwo ◽  
Meiso Yokoyama ◽  
I-Nan Lin
Keyword(s):  
Field Emission ◽  
Amorphous Carbon ◽  
Tetrahedral Amorphous Carbon
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