Gate-all-around (GAA) MOSFETs are the best multi-gate MOSFET structure due to their strong electrostatic control over the channel. The electrostatic controllability can be enhanced further by applying some gate engineering technique to the existing GAA structure. This paper investigates the effect of inner gate (core gate) on the electrostatic performance of conventional GAA MOSFET. The inner gate engineering increases both the electrostatic control and packing density of GAA MOSFET. In this paper, we have presented an inner-gate-engineered (IGE) GAA MOSFET and inspected its advantages over conventional counterparts. The proposed structure exhibits higher [Formula: see text] ratio, low threshold voltage and improved RF performances as compared to the conventional structure. Analytic simulation has been carried out for numerous figures of merit (FOMs) for different technology nodes.
Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications