The Effects of Optical Power of Semiconductor Laser on the Characteristics of Si-diode in an Exposed Device

In this paper, we experimentally studied the effects of optical power of semiconductor laser on the electrical properties of silicon diode of an exposed device. The experimental results showed that the laser diode light of different optical powers (2, 3, and 4 mW) had effects on the silicon diode that are somewhat similar to those of thermal treatment. A shift in the current-voltage curve to the left side was also noticed, which led to a non-linear decrease of the barrier voltage of the diode by the effect of laser light. We also reveal a decrease by 344.8 nA/mW in the reverse saturation current of the silicon diode as a result of exposure to laser light. The forward resistance of the silicon diode decreased with increased incident optical power. The value of the maximum current of diode increased by 0.5 A/W with increasing the optical power incident on the diode.

Khảo sát một số đặc tính bức xạ của buồng ion hóa CC13 và diode bán dẫn razor đối với các chùm photon kích thước nhỏ trên máy gia tốc tuyến tính xạ trị Clinac IX

Purpose: Compare percent depth dose (PDD) and off-center ratio (OCR) measured by the CC13 ionization chamber and the RAZOR silicon diode in small photon beams. Method and Materials: Some dosimetric characteristics, such as PDD, OCR, penumbra and radiation field size, were considered in this study for 2x2, 3x3, and 4x4 cm2 field sizes. We used the CC13 ionization chamber and the RAZOR silicon diode to measure dose distribution with depth along the axis and off-center of the beam. From the results obtained, the team investigated the differences in radiation parameters measured by the two types of probes above. Results: There are significant differences in the radiation parameters investigated for the CC13 ionization chamber and the RAZOR silicon diode, especially the width of penumbra. For PDD curves, the difference is less than 5% from dmax to 30 cm, however the difference becomes greater in the build-up region, which reaches to 33% at the water phatom surface. The width of penumbra measured by CC13 is always larger than that of RAZOR, the ratio of the penumbra width between two detectors is 1.8 and 1.3 for energies of 6 MV and 15 MV, respectively. Conclusion: The RAZOR silicon diode has better dose response than the CC13 ionization chamber for measuring the PDD and the OCR in small photon beams.