New Results on Electroluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.

2020 ◽  
Vol 8 (3) ◽  
pp. 883-888 ◽  
Author(s):  
Yuan Li ◽  
Zhiheng Xing ◽  
Yulin Zheng ◽  
Xin Tang ◽  
Wentong Xie ◽  
...  

High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.


2008 ◽  
Vol 92 (16) ◽  
pp. 161113 ◽  
Author(s):  
Hung-Cheng Lin ◽  
Ruo-Syuan Lin ◽  
Jen-Inn Chyi

2006 ◽  
Vol 88 (7) ◽  
pp. 071105 ◽  
Author(s):  
D. Fuhrmann ◽  
C. Netzel ◽  
U. Rossow ◽  
A. Hangleiter ◽  
G. Ade ◽  
...  

2014 ◽  
Vol 105 (7) ◽  
pp. 071108 ◽  
Author(s):  
Chunhua Du ◽  
Ziguang Ma ◽  
Junming Zhou ◽  
Taiping Lu ◽  
Yang Jiang ◽  
...  

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