Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(0001̄) face

2000 ◽  
Vol 77 (6) ◽  
pp. 866-868 ◽  
Author(s):  
K. Fukuda ◽  
W. J. Cho ◽  
K. Arai ◽  
S. Suzuki ◽  
J. Senzaki ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Properties ◽  
Oxidation Method ◽  
Semiconductor Structures

Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(033̄8)

2002 ◽  
Vol 81 (25) ◽  
pp. 4772-4774 ◽  
Author(s):  
Hiroshi Yano ◽  
Taichi Hirao ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami ◽  
Hiromu Shiomi
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Properties ◽  
Semiconductor Structures

Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (11\bar20) Formed by N2O Oxidation

2005 ◽  
Vol 44 (3) ◽  
pp. 1213-1218 ◽  
Author(s):  
Tsunenobu Kimoto ◽  
Yosuke Kanzaki ◽  
Masato Noborio ◽  
Hiroaki Kawano ◽  
Hiroyuki Matsunami
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Properties ◽  
Semiconductor Structures

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures
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