Interface Properties of C-face 4H-SiC Metal-Oxide-Semiconductor Structures Prepared by Direct Oxidation in Nitric Oxide

2009 ◽  
Author(s):  
D. Okamoto ◽  
H. Yano ◽  
Y. Oshiro ◽  
T. Hatayama ◽  
Y. Uraoka ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Properties ◽  
Direct Oxidation ◽  
Semiconductor Structures

Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(033̄8)

2002 ◽  
Vol 81 (25) ◽  
pp. 4772-4774 ◽  
Author(s):  
Hiroshi Yano ◽  
Taichi Hirao ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami ◽  
Hiromu Shiomi
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Properties ◽  
Semiconductor Structures

Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal–Oxide–Semiconductor Structures

2009 ◽  
Vol 2 ◽  
pp. 021201 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Yuki Oshiro ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Direct Oxidation ◽  
Semiconductor Structures

Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (11\bar20) Formed by N2O Oxidation

2005 ◽  
Vol 44 (3) ◽  
pp. 1213-1218 ◽  
Author(s):  
Tsunenobu Kimoto ◽  
Yosuke Kanzaki ◽  
Masato Noborio ◽  
Hiroaki Kawano ◽  
Hiroyuki Matsunami
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Properties ◽  
Semiconductor Structures
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