Surface Passivation of Crystalline Silicon by Heat Treatment in Liquid Water and its Application to Improve the Interface Properties of Metal-Oxide-Semiconductor Structures

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) ◽

10.23919/am-fpd.2018.8437410 ◽

2018 ◽

Author(s):

Toshiyuki Sameshima ◽

Masahiko Hasumi ◽

Yoshito Hirokawa ◽

Taichi Watanabe ◽

Maui Hino ◽

...

Keyword(s):

Heat Treatment ◽

Metal Oxide ◽

Liquid Water ◽

Surface Passivation ◽

Crystalline Silicon ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Properties ◽

Semiconductor Structures

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Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(0001̄) face

Applied Physics Letters ◽

10.1063/1.1306649 ◽

2000 ◽

Vol 77 (6) ◽

pp. 866-868 ◽

Author(s):

K. Fukuda ◽

W. J. Cho ◽

K. Arai ◽

S. Suzuki ◽

J. Senzaki ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Properties ◽

Oxidation Method ◽

Semiconductor Structures

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Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(033̄8)

Applied Physics Letters ◽

10.1063/1.1529313 ◽

2002 ◽

Vol 81 (25) ◽

pp. 4772-4774 ◽

Author(s):

Hiroshi Yano ◽

Taichi Hirao ◽

Tsunenobu Kimoto ◽

Hiroyuki Matsunami ◽

Hiromu Shiomi

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Properties ◽

Semiconductor Structures

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Interface properties of metal/oxide/semiconductor structures with ultrathin plasma SiO2

Thin Solid Films ◽

10.1016/0040-6090(83)90468-6 ◽

1983 ◽

Vol 100 (2) ◽

pp. 131-140 ◽

Author(s):

E.D. Atanassova ◽

A.P. Kovtchavzev

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Properties ◽

Semiconductor Structures

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Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

Journal of Applied Physics ◽

10.1063/1.3234395 ◽

2009 ◽

Vol 106 (7) ◽

pp. 073716 ◽

Author(s):

Takashi Sasada ◽

Yosuke Nakakita ◽

Mitsuru Takenaka ◽

Shinichi Takagi

Keyword(s):

Metal Oxide ◽

Thermal Oxidation ◽

Orientation Dependence ◽

Surface Orientation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Properties ◽

Semiconductor Structures

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Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (11\bar20) Formed by N2O Oxidation

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.1213 ◽

2005 ◽

Vol 44 (3) ◽

pp. 1213-1218 ◽

Author(s):

Tsunenobu Kimoto ◽

Yosuke Kanzaki ◽

Masato Noborio ◽

Hiroaki Kawano ◽

Hiroyuki Matsunami

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Properties ◽

Semiconductor Structures

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A spectroscopic method for the evaluation of surface passivation treatments on metal–oxide–semiconductor structures

Applied Surface Science ◽

10.1016/j.apsusc.2014.01.208 ◽

2014 ◽

Vol 301 ◽

pp. 40-45

Author(s):

Lee A. Walsh ◽

Paul K. Hurley ◽

Jun Lin ◽

Eric Cockayne ◽

T.P. O’Regan ◽

...

Keyword(s):

Metal Oxide ◽

Surface Passivation ◽

Spectroscopic Method ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Interface properties of metal‐oxide‐semiconductor structures onn‐type 6H and 4H‐SiC

Journal of Applied Physics ◽

10.1063/1.362389 ◽

1996 ◽

Vol 79 (10) ◽

pp. 7814-7819 ◽

Author(s):

P. Friedrichs ◽

E. P. Burte ◽

R. Schörner

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Properties ◽

Semiconductor Structures

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Interface properties of metal/oxide/semiconductor and metal/insulator/semiconductor structures on Ga1−xInxAs with x=0.35 and 0.10

Thin Solid Films ◽

10.1016/0040-6090(83)90432-7 ◽

1983 ◽

Vol 103 (1-3) ◽

pp. 155-166 ◽

Author(s):

S. Gourrier ◽

P. Friedel ◽

J.P. Chané

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Interface Properties of C-face 4H-SiC Metal-Oxide-Semiconductor Structures Prepared by Direct Oxidation in Nitric Oxide

10.7567/ssdm.2009.j-3-4 ◽

2009 ◽

Author(s):

D. Okamoto ◽

H. Yano ◽

Y. Oshiro ◽

T. Hatayama ◽

Y. Uraoka ◽

...

Keyword(s):

Nitric Oxide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Properties ◽

Direct Oxidation ◽

Semiconductor Structures

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Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures

10.21236/ada329531 ◽

1997 ◽

Author(s):

R. Ludeke

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Spatially Resolved ◽

Transport Studies

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