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Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
Journal of Applied Physics
◽
10.1063/1.3234395
◽
2009
◽
Vol 106
(7)
◽
pp. 073716
◽
Cited By ~ 89
Author(s):
Takashi Sasada
◽
Yosuke Nakakita
◽
Mitsuru Takenaka
◽
Shinichi Takagi
Keyword(s):
Metal Oxide
◽
Thermal Oxidation
◽
Orientation Dependence
◽
Surface Orientation
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Interface Properties
◽
Semiconductor Structures
Download Full-text
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References
Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(0001̄) face
Applied Physics Letters
◽
10.1063/1.1306649
◽
2000
◽
Vol 77
(6)
◽
pp. 866-868
◽
Cited By ~ 40
Author(s):
K. Fukuda
◽
W. J. Cho
◽
K. Arai
◽
S. Suzuki
◽
J. Senzaki
◽
...
Keyword(s):
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Interface Properties
◽
Oxidation Method
◽
Semiconductor Structures
Download Full-text
Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(033̄8)
Applied Physics Letters
◽
10.1063/1.1529313
◽
2002
◽
Vol 81
(25)
◽
pp. 4772-4774
◽
Cited By ~ 22
Author(s):
Hiroshi Yano
◽
Taichi Hirao
◽
Tsunenobu Kimoto
◽
Hiroyuki Matsunami
◽
Hiromu Shiomi
Keyword(s):
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Interface Properties
◽
Semiconductor Structures
Download Full-text
Interface properties of metal/oxide/semiconductor structures with ultrathin plasma SiO2
Thin Solid Films
◽
10.1016/0040-6090(83)90468-6
◽
1983
◽
Vol 100
(2)
◽
pp. 131-140
◽
Cited By ~ 2
Author(s):
E.D. Atanassova
◽
A.P. Kovtchavzev
Keyword(s):
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Interface Properties
◽
Semiconductor Structures
Download Full-text
Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
Applied Physics Letters
◽
10.1063/1.2959731
◽
2008
◽
Vol 93
(3)
◽
pp. 032104
◽
Cited By ~ 261
Author(s):
Hiroshi Matsubara
◽
Takashi Sasada
◽
Mitsuru Takenaka
◽
Shinichi Takagi
Keyword(s):
Metal Oxide
◽
Thermal Oxidation
◽
Metal Oxide Semiconductor
◽
Trap Density
◽
Oxide Semiconductor
◽
Interface Trap Density
◽
Interface Trap
◽
Semiconductor Structures
Download Full-text
Thermal oxidation and electrical properties of silicon carbide metal‐oxide‐semiconductor structures
Journal of Applied Physics
◽
10.1063/1.353270
◽
1993
◽
Vol 73
(3)
◽
pp. 1279-1283
◽
Cited By ~ 33
Author(s):
N. Singh
◽
A. Rys
Keyword(s):
Silicon Carbide
◽
Electrical Properties
◽
Metal Oxide
◽
Thermal Oxidation
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Semiconductor Structures
Download Full-text
Surface Passivation of Crystalline Silicon by Heat Treatment in Liquid Water and its Application to Improve the Interface Properties of Metal-Oxide-Semiconductor Structures
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
◽
10.23919/am-fpd.2018.8437410
◽
2018
◽
Author(s):
Toshiyuki Sameshima
◽
Masahiko Hasumi
◽
Yoshito Hirokawa
◽
Taichi Watanabe
◽
Maui Hino
◽
...
Keyword(s):
Heat Treatment
◽
Metal Oxide
◽
Liquid Water
◽
Surface Passivation
◽
Crystalline Silicon
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Interface Properties
◽
Semiconductor Structures
Download Full-text
Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (11\bar20) Formed by N2O Oxidation
Japanese Journal of Applied Physics
◽
10.1143/jjap.44.1213
◽
2005
◽
Vol 44
(3)
◽
pp. 1213-1218
◽
Cited By ~ 149
Author(s):
Tsunenobu Kimoto
◽
Yosuke Kanzaki
◽
Masato Noborio
◽
Hiroaki Kawano
◽
Hiroyuki Matsunami
Keyword(s):
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Interface Properties
◽
Semiconductor Structures
Download Full-text
Interface properties of metal‐oxide‐semiconductor structures onn‐type 6H and 4H‐SiC
Journal of Applied Physics
◽
10.1063/1.362389
◽
1996
◽
Vol 79
(10)
◽
pp. 7814-7819
◽
Cited By ~ 38
Author(s):
P. Friedrichs
◽
E. P. Burte
◽
R. Schörner
Keyword(s):
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Interface Properties
◽
Semiconductor Structures
Download Full-text
Interface properties of metal/oxide/semiconductor and metal/insulator/semiconductor structures on Ga1−xInxAs with x=0.35 and 0.10
Thin Solid Films
◽
10.1016/0040-6090(83)90432-7
◽
1983
◽
Vol 103
(1-3)
◽
pp. 155-166
◽
Cited By ~ 3
Author(s):
S. Gourrier
◽
P. Friedel
◽
J.P. Chané
Keyword(s):
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Interface Properties
◽
Metal Insulator
◽
Metal Insulator Semiconductor
◽
Semiconductor Structures
Download Full-text
Interface Properties of C-face 4H-SiC Metal-Oxide-Semiconductor Structures Prepared by Direct Oxidation in Nitric Oxide
10.7567/ssdm.2009.j-3-4
◽
2009
◽
Author(s):
D. Okamoto
◽
H. Yano
◽
Y. Oshiro
◽
T. Hatayama
◽
Y. Uraoka
◽
...
Keyword(s):
Nitric Oxide
◽
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Interface Properties
◽
Direct Oxidation
◽
Semiconductor Structures
Download Full-text
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