Epitaxial growth of CrO2 thin films by chemical-vapor deposition from a Cr8O21 precursor

2001 ◽  
Vol 89 (2) ◽  
pp. 1035-1040 ◽  
Author(s):  
P. G. Ivanov ◽  
S. M. Watts ◽  
D. M. Lind
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor

Solid‐phase epitaxial growth of lithium tantalate thin films deposited by spray‐metalorganic chemical vapor deposition

1993 ◽  
Vol 63 (3) ◽  
pp. 331-333 ◽  
Author(s):  
Alex A. Wernberg ◽  
Gabriel Braunstein ◽  
Gustavo Paz‐Pujalt ◽  
Henry J. Gysling ◽  
Thomas N. Blanton
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Lithium Tantalate ◽  
Metalorganic Chemical

Epitaxial growth of BaTiO3 thin films at 600 °C by metalorganic chemical vapor deposition

1995 ◽  
Vol 66 (21) ◽  
pp. 2801-2803 ◽  
Author(s):  
D. L. Kaiser ◽  
M. D. Vaudin ◽  
L. D. Rotter ◽  
Z. L. Wang ◽  
J. P. Cline ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Low Temperature Epitaxy of n-Doped Silicon Thin Films Using Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 989 ◽  
Author(s):  
Mahdi Farrokh Baroughi ◽  
Hassan G. El-Gohary ◽  
Cherry Y. Cheng ◽  
Siva Sivoththaman
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Hydrogen ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Transmission Electron

AbstractHighly conductive epiraxial silicon thin films, with conductivities more than 680 ¥Ø-1cm-1, were obtained using plasma enhanced chemical vapor deposition (PECVD) technique at 300¢ªC. The effect of hydrogen in growth of low temperature extrinsic Si thin films was studied using conductivity, Hall, and Raman measurements, and it was shown that epitaxial growth was possible at hydrogen dilution (HD) ratios more than 85%. The epitaxial growth of the extrinsic Si thin films at high hydrogen dilution regime was confirmed by high resolution transmission electron microscopy (HRTEM).

Epitaxial Growth of MgO-doped Lithium Niobate Thin Films by Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 43 (12) ◽  
pp. 8195-8198 ◽  
Author(s):  
Makoto Iwai ◽  
Makoto Ohmori ◽  
Takashi Yoshino ◽  
Shoichiro Yamaguchi ◽  
Minoru Imaeda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Lithium Niobate ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical
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