Lattice kinetic Monte Carlo simulation of epitaxial growth of silicon thin films in H 2 /SiH 4 chemical vapor deposition systems

2017 ◽  
Vol 634 ◽  
pp. 121-133 ◽  
Author(s):  
Juan Pablo Balbuena ◽  
Ignacio Martin-Bragado
2007 ◽  
Vol 989 ◽  
Author(s):  
Mahdi Farrokh Baroughi ◽  
Hassan G. El-Gohary ◽  
Cherry Y. Cheng ◽  
Siva Sivoththaman

AbstractHighly conductive epiraxial silicon thin films, with conductivities more than 680 ¥Ø-1cm-1, were obtained using plasma enhanced chemical vapor deposition (PECVD) technique at 300¢ªC. The effect of hydrogen in growth of low temperature extrinsic Si thin films was studied using conductivity, Hall, and Raman measurements, and it was shown that epitaxial growth was possible at hydrogen dilution (HD) ratios more than 85%. The epitaxial growth of the extrinsic Si thin films at high hydrogen dilution regime was confirmed by high resolution transmission electron microscopy (HRTEM).


2010 ◽  
Vol 108 (1) ◽  
pp. 014905 ◽  
Author(s):  
P. W. May ◽  
J. N. Harvey ◽  
N. L. Allan ◽  
J. C. Richley ◽  
Yu. A. Mankelevich

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document