Detection of up to 20 THz with a low-temperature-grown GaAs photoconductive antenna gated with 15 fs light pulses

2000 ◽  
Vol 77 (25) ◽  
pp. 4104-4106 ◽  
Author(s):  
Shunsuke Kono ◽  
Masahiko Tani ◽  
Ping Gu ◽  
Kiyomi Sakai
OSA Continuum ◽  
2019 ◽  
Vol 2 (4) ◽  
pp. 1310
Author(s):  
Takashi Ogura ◽  
Yoshiaki Nakajima ◽  
Yi-Da Hsieh ◽  
Takeo Minamikawa ◽  
Yasuhiro Mizutani ◽  
...  

2008 ◽  
Vol 35 (3) ◽  
pp. 396-400
Author(s):  
石小溪 Shi Xiaoxi ◽  
赵国忠 Zhao Guozhong ◽  
张存林 Zhang Cunlin ◽  
崔利杰 Cui Lijie ◽  
曾一平 Zeng Yiping

2015 ◽  
Vol 17 (12) ◽  
pp. 125802 ◽  
Author(s):  
Rubén Darío Velásque Ríos ◽  
Siméon Bikorimana ◽  
Muhammad Ali Ummy ◽  
Roger Dorsinville ◽  
Sang-Woo Seo

2018 ◽  
Vol 271 ◽  
pp. 92-97
Author(s):  
Sergey Nomoev ◽  
Ivan Vasilevskii ◽  
Erzhena Khartaeva

We investigate the influence of the surface properties of a low-temperature-grown GaAs photoconductive antenna on the terahertz (THz) response power. A comparison to the surface roughness which is extracted from an atomic force microscope is given. We used energy dispersive x-ray spectroscopy (EDX) measurements to determine the Ga/As compositional ratio in the LT-GaAs.


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