Different responses of localized and extended excitons to exciton–exciton scattering manifested in excitation density-dependent photoluminescence excitation spectra

2001 ◽  
Vol 89 (11) ◽  
pp. 6171-6176 ◽  
Author(s):  
Sheng Lan ◽  
Satoshi Nishikawa ◽  
Osamu Wada ◽  
Kouichi Akahane ◽  
Yoshitaka Okada ◽  
...  
Keyword(s):  
Excitation Density ◽  
Photoluminescence Excitation ◽  
Excitation Spectra ◽  
Density Dependent ◽  
Exciton Scattering

scholarly journals Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu2ZnSnSe4/Mo/glass

2019 ◽  
Vol 672 ◽  
pp. 146-151 ◽  
Author(s):  
M.A. Sulimov ◽  
M.V. Yakushev ◽  
J. Márquez-Prieto ◽  
I. Forbes ◽  
P.R. Edwards ◽  
...  
Keyword(s):  
Photoluminescence Excitation ◽  
Excitation Spectra

The Relation of Thin Film Electroluminescence and Photoluminescence Excitation Spectra

1989 ◽  
pp. 105-108
Author(s):  
Zhilin Zhang ◽  
Zhuotong Li ◽  
Biao Mei ◽  
Xueyin Jiang ◽  
Peifang Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoluminescence Excitation ◽  
Excitation Spectra

Excitation Density Dependent Photoluminescence Studies on Homo-Epitaxial GaN Nanowall Networks Grown by Laser Assisted Molecular Beam Epitaxy

2020 ◽  
Vol 20 (6) ◽  
pp. 3866-3872
Author(s):  
Ch. Ramesh ◽  
J. Pandey ◽  
P. Tyagi ◽  
A. Soni ◽  
M. Senthil Kumar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Blue Shift ◽  
Peak Position ◽  
Excitation Density ◽  
Density Dependent ◽  
Band Emission ◽  
Luminescence Peak ◽  
Photoluminescence Studies ◽  
Gan Film

The optical properties of laser-assisted molecular beam epitaxy grown homo-epitaxialGaN nanowall networks (NWNs) were investigated using power dependent photoluminescence (PL) spectroscopy and compared with homo-epitaxial GaN thin film. The pore size and tip width of GaN NWN sample is ˜120–180 nm and 10–15 nm, respectively. The ultraviolet-visible spectroscopy study shows that the GaN NWNs have low optical light reflection and minimum Fabry-Perot cavity effect than GaN film. The room temperature PL spectroscopy reveals that the GaN NWNs possesses enhanced band gap of 3.51 eV with blue shift of 90 meV than the GaN film (3.42 eV). The excitation density dependent PL spectroscopy measurements reveal that the GaN NWNs nanowall and near band emission (NBE) peak position and its linewidth invariant. The intensity of NBE peak for GaN film and nanowalls varies linearly whereas NBE to defect related yellow luminescence peak intensity ratio shows a non-linear variation on the excitation density. The excitation density in PL measurements plays a key role when the sample quality compared on the basis of PL data.

Time-resolved excitation density dependent fluorescence of R-phycoerythrin single crystal

1994 ◽  
Vol 222 (3) ◽  
pp. 204-208 ◽  
Author(s):  
H.Z. Wang ◽  
X.G. Zheng ◽  
F.L. Zhao ◽  
Z.L. Gao ◽  
Z.X. Yu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Excitation Density ◽  
Time Resolved ◽  
Density Dependent

Spectroscopic identification of individual fluorophores using photoluminescence excitation spectra

2018 ◽  
Vol 270 (3) ◽  
pp. 261-271 ◽  
Author(s):  
J. CZERSKI ◽  
W. COLOMB ◽  
F. CANNATARO ◽  
S.K. SARKAR
Keyword(s):  
Photoluminescence Excitation ◽  
Excitation Spectra ◽  
Spectroscopic Identification

scholarly journals Thermal Relaxation Spectra for Evaluating Luminescence Quantum Efficiency of CASN:Eu2+ Measured by Balanced-Detection Sagnac-Interferometer Photothermal Deflection Spectroscopy

2020 ◽  
Vol 10 (3) ◽  
pp. 1008
Author(s):  
Hiromichi Chima ◽  
Naoyuki Shiokawa ◽  
Keisuke Seto ◽  
Kohsei Takahashi ◽  
Naoto Hirosaki ◽  
...  
Keyword(s):  
Excitation Spectrum ◽  
Quantum Efficiency ◽  
Thermal Relaxation ◽  
Photoluminescence Excitation ◽  
Sagnac Interferometer ◽  
Excitation Spectra ◽  
Radiative Relaxation ◽  
Relaxation Spectra ◽  
Balanced Detection ◽  
Photothermal Deflection

Highly sensitive broadband photothermal spectroscopy with a white-light lamp as the excitation source was developed by combining a Sagnac interferometer and balanced detection with a photothermal deflection method. A probe beam was split by a birefringent crystal CaCO3 into signal and reference beams with a balanced intensity. This balanced detection enabled the measurement of photoexcited thermal relaxation spectra of materials in the air over the whole visible range in the weak excitation limit 50 µW/cm2. The photothermal excitation spectrum of Eu2+-doped CaAlSiN3 phosphors (CASN:Eu2+) with a high luminescent quantum efficiency was measured to be distinctly different from the photoluminescence excitation spectrum which reflects the absorption spectrum, revealing the thermal relaxation mechanism of the phosphor. Assuming a typical non-radiative relaxation from the higher excited states to the lowest excited state and successively to the ground state, it is demonstrated that the photoluminescence efficiency of the phosphors is readily evaluated simply by comparing the photothermal and photoluminescence excitation spectra.

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