Single-electron transistors operating at room temperature, fabricated utilizing nanocrystals created by focused-ion beam

Applied Physics Letters ◽

10.1063/1.1458685 ◽

2002 ◽

Vol 80 (12) ◽

pp. 2168-2170 ◽

Author(s):

T. W. Kim ◽

D. C. Choo ◽

J. H. Shim ◽

S. O. Kang

Keyword(s):

Room Temperature ◽

Focused Ion Beam ◽

Ion Beam ◽

Single Electron ◽

Single Electron Transistors ◽

Electron Transistors

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Fabrication and characterization of room temperature operating single electron transistors using focused ion beam technologies

10.37099/mtu.dc.etds/65 ◽

2008 ◽

Author(s):

Prasanjit Santosh Karre

Keyword(s):

Room Temperature ◽

Focused Ion Beam ◽

Ion Beam ◽

Single Electron ◽

Single Electron Transistors ◽

Temperature Operating ◽

Fabrication And Characterization ◽

Electron Transistors

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Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.5669 ◽

2004 ◽

Vol 43 (8A) ◽

pp. 5669-5670 ◽

Author(s):

Yuto Kurokawa ◽

Yutaka Ohno ◽

Shigeru Kishimoto ◽

Toshiya Okazaki ◽

Hisanori Shinohara ◽

...

Keyword(s):

Carbon Nanotube ◽

Focused Ion Beam ◽

Ion Beam ◽

Single Electron ◽

Fabrication Technique ◽

Single Electron Transistors ◽

Electron Transistors

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AlGaAs/InGaAs/GaAs Single Electron Transistors Fabricated by Ga Focused Ion Beam Implantation

10.7567/ssdm.1993.lc-13 ◽

1993 ◽

Author(s):

Toshimasa Fujisawa ◽

Yoshiro Hirayama ◽

Seigo Tarucha

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Single Electron ◽

Single Electron Transistors ◽

Ion Beam Implantation ◽

Electron Transistors

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AlGaAs/InGaAs/GaAs single electron transistors fabricated by Ga focused ion beam implantation

Applied Physics Letters ◽

10.1063/1.111634 ◽

1994 ◽

Vol 64 (17) ◽

pp. 2250-2252 ◽

Author(s):

Toshimasa Fujisawa ◽

Yoshiro Hirayama ◽

Seigo Tarucha

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Single Electron ◽

Single Electron Transistors ◽

Ion Beam Implantation ◽

Electron Transistors

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Room temperature Nb/Nb oxide-based single-electron transistors

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650302 ◽

2002 ◽

Author(s):

J.-I. Shirakashi ◽

K. Matsumoto ◽

N. Miura ◽

M. Konagai

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistors ◽

Electron Transistors

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Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

Nanotechnology ◽

10.1088/1361-6528/aa5ddd ◽

2017 ◽

Vol 28 (12) ◽

pp. 125208 ◽

Author(s):

Zahid A K Durrani ◽

Mervyn E Jones ◽

Chen Wang ◽

Dixi Liu ◽

Jonathan Griffiths

Keyword(s):

Excited States ◽

Quantum Confinement ◽

Room Temperature ◽

Single Electron ◽

Single Electron Transistors ◽

Electron Transistors

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Silicon Single Electron Transistors Operating at Room Temperature and Their Applications

Comprehensive Semiconductor Science and Technology ◽

10.1016/b978-0-44-453153-7.00032-8 ◽

2011 ◽

pp. 340-382

Author(s):

K. Miyaji ◽

T. Hiramoto

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistors ◽

Electron Transistors

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A Full Adder Based on Hybrid Single-Electron Transistors and MOSFETs at Room Temperature

Communications in Computer and Information Science - Computer Engineering and Technology ◽

10.1007/978-3-642-41635-4_26 ◽

2013 ◽

pp. 244-250 ◽

Author(s):

Xiaobao Chen ◽

Zuocheng Xing ◽

Bingcai Sui

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistors ◽

Electron Transistors

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Fault Models and Device Yield of a Large Population of Room Temperature Operation Single-Electron Transistors

20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07) ◽

10.1109/vlsid.2007.183 ◽

2007 ◽

Author(s):

Daniel Mazor ◽

Michael L. Bushnell ◽

David J. Mulligan ◽

Richard J. Blaikie

Keyword(s):

Room Temperature ◽

Large Population ◽

Single Electron ◽

Fault Models ◽

Single Electron Transistors ◽

Electron Transistors ◽

Room Temperature Operation

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Focused Ion Beam Fabrication of Sub-20nm Inter-Electrode Gaps for Room Temperature Operating Single Electron Transistor

2008 8th IEEE Conference on Nanotechnology ◽

10.1109/nano.2008.17 ◽

2008 ◽

Author(s):

Manoranjan Acharya ◽

P. Santosh Kumar Karre ◽

Paul L. Bergstrom

Keyword(s):

Room Temperature ◽

Focused Ion Beam ◽

Ion Beam ◽

Single Electron ◽

Single Electron Transistor ◽

Temperature Operating

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