Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer

2003 ◽  
Vol 798 ◽  
Author(s):  
G. C. Chi ◽  
J. K. Sheu ◽  
M. L. Lee ◽  
C. J. Kao ◽  
Y. K. Su ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dark Current ◽  
Reverse Bias ◽  
Incident Light ◽  
Response Speed ◽  
Light Wavelength ◽  
Cap Layer ◽  
Incident Light Wavelength

ABSTRACTAlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a –1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.

Reduction of Dark Current in AlGaN–GaN Schottky-Barrier Photodetectors With a Low-Temperature-Grown GaN Cap Layer

2004 ◽  
Vol 25 (9) ◽  
pp. 593-595 ◽  
Author(s):  
M.L. Lee ◽  
J.K. Sheu ◽  
Y.K. Su ◽  
S.J. Chang ◽  
W.C. Lai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Dark Current ◽  
Cap Layer

scholarly journals Properties and Analysis of Transparency Conducting AZO Films by Using DC Power and RF Power Simultaneous Magnetron Sputtering

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Neng-Fu Shih ◽  
Jin-Zhou Chen ◽  
Yeu-Long Jiang
Keyword(s):  
Incident Light ◽  
Blue Shift ◽  
Light Wavelength ◽  
Rf Power ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dc Power ◽  
Incident Light Wavelength ◽  
Significant Blue Shift ◽  
Sputtering System

DC power and RF power were introduced into the magnetic controlled sputtering system simultaneously to deposit AZO films in order to get an acceptable deposition rate with high quality transparency conducting thin film. The resistivity decreases with the RF power for the as-deposited samples. The resistivity of 6 × 10−4 Ω-cm and 3.5–4.5 × 10−4 Ω-cm is obtained for the as-deposited sample, and for all annealed samples, respectively. The transmittance of the AZO films with higher substrate temperature is generally above 80% for the incident light wavelength within 400–800 nm. The transmittance of the as-deposited samples reveals a clear blue shift phenomenon. The AZO films present (002) oriented preference as can be seen from the X-ray diffraction curves. All AZO films reveal compressive stress. The annealing process improves the electrical property of AZO films. A significant blue shift phenomenon has been found, which may have a great application for electrode in solar cell.

scholarly journals Numerical simulation of a plasmonic lens for laser light focusing

2021 ◽  
Vol 2103 (1) ◽  
pp. 012174
Author(s):  
E S Kozlova ◽  
V V Kotlyar
Keyword(s):  
Focal Spot ◽  
Laser Light ◽  
Incident Light ◽  
Lens Design ◽  
Light Wavelength ◽  
Optimal Parameters ◽  
Plasmonic Lens ◽  
Radial Polarization ◽  
Incident Light Wavelength ◽  
Difference Time

Abstract In this paper, the design of a plasmonic lens in gold and silver thin films for focusing the light with radial polarization is presented. Using the finite difference time domain method the optimal parameters of the plasmonic lens design are found. It was shown that the silver plasmonic lens produces a tight focal spot with a full width at half maximum of 0.38 of the incident light wavelength.

GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

2003 ◽  
Vol 82 (17) ◽  
pp. 2913-2915 ◽  
Author(s):  
M. L. Lee ◽  
J. K. Sheu ◽  
W. C. Lai ◽  
S. J. Chang ◽  
Y. K. Su ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer

GaN Schottky barrier photodiode on Si (111) with low-temperature-grown cap layer

2009 ◽  
Vol 481 (1-2) ◽  
pp. L15-L19 ◽  
Author(s):  
L.S. Chuah ◽  
Z. Hassan ◽  
H. Abu Hassan ◽  
N.M. Ahmed
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 971-974
Author(s):  
Ho Keun Song ◽  
Jong Ho Lee ◽  
Myeong Sook Oh ◽  
Jeong Hyun Moon ◽  
Han Seok Seo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
High Quality ◽  
Ohmic Behavior ◽  
Leakage Path ◽  
Crystallographic Characteristics

Schottky barrier diode (SBD) was fabricated by MOCVD using bistrimethylsilylmethane (BTMSM, C7H20Si2) precursor. The 4H-SiC substrates which had different crystallographic characteristics were used for the comparison of the crystallinity effect on the electrical properties of the SBDs. From the measurement of the reverse I-V characteristics of the SBDs with micropipes, it is shown that the origin of the main leakage path and early breakdown (or ohmic behavior in reverse bias) in 4H-SiC SBDs is the grain boundaries caused by the inclusions or other defects. The best performance of SBD were shown in the epilayer grown at 1440 oC using high quality substrate, and the breakdown voltage and reverse leakage current were about 450 V and 10-9 A/cm2, respectively.

Rectifying characteristics of WSi0.8–GaN Schottky barrier diodes with a GaN cap layer grown at low temperature

2005 ◽  
Vol 98 (3) ◽  
pp. 036106
Author(s):  
J. K. Sheu ◽  
M. L. Lee ◽  
W. C. Lai ◽  
H. C. Tseng ◽  
G. C. Chi
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Cap Layer

Light-triggered Silicon-carbon Pi'npin Devices for Optical Communications: Theoretical and Electrical Approaches

2010 ◽  
Vol 1245 ◽  
Author(s):  
Manuela Vieira ◽  
M. A. Vieira ◽  
João Costa ◽  
Paula Louro ◽  
Miguel Fernandes ◽  
...  
Keyword(s):  
Optical Communications ◽  
Incident Light ◽  
Optical Signal ◽  
Nonlinear Dependence ◽  
Light Wavelength ◽  
Electrical Model ◽  
Silicon Carbon ◽  
Light Generation ◽  
Incident Light Wavelength ◽  
Device Operation

AbstractIn this paper a light-activated multiplexer/demultiplexer silicon-carbon device is analysed. An electrical model for the device operation is presented and used to compare output signals with experimental data. An algorithm that takes into accounts the voltage and the optical bias controlled sensitivities is developed. The device is a double pi'n/pin a-SiC:H heterostructure with two optical gate connections for light triggering in different spectral regions. Multiple monochromatic pulsed communication channels were transmitted together, each one with a specific bit sequence. The combined optical signal was analyzed by reading out, under different applied voltages and optical bias, the generated photocurrent across the device. Experimental and simulated results show that the output multiplexed signal has a strong nonlinear dependence on the light absorption profile, i.e. on the incident light wavelength, bit rate and intensity under unbalanced light generation of carriers. By switching between positive and negative voltages the input channels can be recovered or removed from the output signal.

scholarly journals PLASMON MODES IN METAL NANOWIRES AND LEFT-HANDED MATERIALS

2002 ◽  
Vol 11 (01) ◽  
pp. 65-74 ◽  
Author(s):  
VIKTOR A. PODOLSKIY ◽  
ANDREY K. SARYCHEV ◽  
VLADIMIR M. SHALAEV
Keyword(s):  
Near Infrared ◽  
Incident Light ◽  
Field Enhancement ◽  
Dipole Approximation ◽  
Metal Nanowires ◽  
Light Wavelength ◽  
Local Field Enhancement ◽  
Left Handed ◽  
Incident Light Wavelength ◽  
Plasmon Modes

The electromagnetic field distribution for thin metal nanowires is found, by using the discrete dipole approximation. The plasmon polariton modes in wires are numerically simulated. These modes are found to be dependent on the incident light wavelength and direction of propagation. The existence of localized plasmon modes and strong local field enhancement in percolation nanowire composites is demonstrated. Novel left-handed materials in the near-infrared and visible are proposed based on nanowire composites.

Sign in / Sign up

Export Citation Format

Share Document