Temperature dependence of the energy gap and free carrier absorption in bulk InAs0.05Sb0.95 single crystals

2003 ◽  
Vol 82 (26) ◽  
pp. 4720-4722 ◽  
Author(s):  
Bhavtosh Bansal ◽  
V. K. Dixit ◽  
V. Venkataraman ◽  
H. L. Bhat
1972 ◽  
Vol 53 (1) ◽  
pp. 55-64 ◽  
Author(s):  
M. P. Lisitsa ◽  
Z. A. Demidenko ◽  
V. N. Malinko ◽  
E. V. Pidlisnyi ◽  
M. Ya. Valakh ◽  
...  

2019 ◽  
Vol 126 (3) ◽  
pp. 271
Author(s):  
И.А. Каплунов ◽  
А.И. Колесников ◽  
Г.И. Кропотов ◽  
В.Е. Рогалин

AbstractThe transmission of intrinsic, antimony-doped, and gallium-doped Ge single crystals in the THz spectral range have been experimentally investigated. It is shown that the attenuation coefficient of intrinsic germanium in the range of 160‒220 μm is at a level of ~0.5 cm^‒1, a value comparable with that for silicon. The free-carrier absorption cross sections of silicon and germanium are significantly different, which may be caused by the difference in the mechanisms of carrier–phonon interaction in these materials.


2010 ◽  
Vol 82 (23) ◽  
Author(s):  
Peter D. Olszak ◽  
Claudiu M. Cirloganu ◽  
Scott Webster ◽  
Lazaro A. Padilha ◽  
Shekhar Guha ◽  
...  

2021 ◽  
Vol 27 (3) ◽  
pp. 1-11
Author(s):  
Yen-Wei Hsueh ◽  
Chih-Hsien Cheng ◽  
Cai-Syuan Fu ◽  
Huai-Yung Wang ◽  
Bo-Ji Huang ◽  
...  

2004 ◽  
Vol 84 (13) ◽  
pp. 2265-2267 ◽  
Author(s):  
Joerg Isenberg ◽  
Wilhelm Warta

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