Effect of magnetic field on random telegraph noise in the source current of p-channel metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1596381 ◽

2003 ◽

Vol 83 (4) ◽

pp. 710-712 ◽

Author(s):

Filipp A. Baron ◽

Yaohui Zhang ◽

Mingqiang Bao ◽

Ruigang Li ◽

Jinmin Li ◽

...

Keyword(s):

Magnetic Field ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.114001 ◽

2012 ◽

Vol 51 (11R) ◽

pp. 114001 ◽

Author(s):

Naoki Tega ◽

Hiroshi Miki ◽

Toshiyuki Mine ◽

Kazuyoshi Torii

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.114001 ◽

2012 ◽

Vol 51 ◽

pp. 114001

Author(s):

Naoki Tega ◽

Hiroshi Miki ◽

Toshiyuki Mine ◽

Kazuyoshi Torii

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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Extraction of time constants ratio over nine orders of magnitude for understanding random telegraph noise in metal–oxide–semiconductor field-effect transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ec19 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EC19 ◽

Author(s):

Toshiki Obara ◽

Akihiro Yonezawa ◽

Akinobu Teramoto ◽

Rihito Kuroda ◽

Shigetoshi Sugawa ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Time Constants ◽

Telegraph Noise

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Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO2and high-kgate dielectrics

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.03df02 ◽

2014 ◽

Vol 53 (3S2) ◽

pp. 03DF02 ◽

Author(s):

Masayuki Kamei ◽

Yoshinori Takao ◽

Koji Eriguchi ◽

Kouichi Ono

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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An automated system for measurement of random telegraph noise in metal-oxide-semiconductor field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.24373 ◽

1989 ◽

Vol 36 (6) ◽

pp. 1217-1219 ◽

Author(s):

K.K. Hung ◽

P.K. Ko ◽

C. Hu ◽

Y.C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Automated System ◽

Random Telegraph Noise ◽

Telegraph Noise

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Characterization of Oxide Traps in 28 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc24 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC24 ◽

Author(s):

Bo-Chin Wang ◽

San-Lein Wu ◽

Yu-Ying Lu ◽

Chien-Wei Huang ◽

Chung-Yi Wu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Uniaxial Tensile ◽

Random Telegraph Noise ◽

Tensile Stresses ◽

Telegraph Noise

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Characterization of Oxide Tarps in 28 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc11 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC11 ◽

Author(s):

Bo Chin Wang ◽

San Lein Wu ◽

Chien Wei Huang ◽

Yu Ying Lu ◽

Shoou Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

P Type ◽

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Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3292204 ◽

2010 ◽

Vol 96 (4) ◽

pp. 043502 ◽

Author(s):

Ju-Wan Lee ◽

Hyungcheol Shin ◽

Jong-Ho Lee

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

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Characterization of Oxide Tarps in 28 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc11 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC11 ◽

Author(s):

Bo Chin Wang ◽

San Lein Wu ◽

Chien Wei Huang ◽

Yu Ying Lu ◽

Shoou Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

P Type ◽

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Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications

Journal of Applied Physics ◽

10.1063/1.3676255 ◽

2012 ◽

Vol 111 (2) ◽

pp. 024101 ◽

Author(s):

W. H. Liu ◽

K. L. Pey ◽

N. Raghavan ◽

X. Wu ◽

M. Bosman

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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