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Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors
Applied Physics Letters
◽
10.1063/1.3292204
◽
2010
◽
Vol 96
(4)
◽
pp. 043502
◽
Cited By ~ 9
Author(s):
Ju-Wan Lee
◽
Hyungcheol Shin
◽
Jong-Ho Lee
Keyword(s):
Metal Oxide
◽
Leakage Current
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Random Telegraph Noise
◽
Telegraph Noise
◽
P Type
Download Full-text
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Characterization of Oxide Tarps in 28 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise
Japanese Journal of Applied Physics
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10.7567/jjap.51.02bc11
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2012
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Vol 51
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Characterization of Oxide Tarps in 28 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise
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Metal Oxide
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Field Effect
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Field Effect Transistors
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Metal Oxide Semiconductor
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Oxide Semiconductor
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Characterization of Oxide Traps in 28 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise
Japanese Journal of Applied Physics
◽
10.7567/jjap.52.04cc24
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2013
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Vol 52
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pp. 04CC24
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Author(s):
Bo-Chin Wang
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Chien-Wei Huang
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Metal Oxide
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Field Effect
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Field Effect Transistors
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Metal Oxide Semiconductor
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Oxide Semiconductor
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Uniaxial Tensile
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Random Telegraph Noise
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Tensile Stresses
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Telegraph Noise
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Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal–oxide–semiconductor field-effect transistors
Japanese Journal of Applied Physics
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2020
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Author(s):
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Keyword(s):
Metal Oxide
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Field Effect
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Field Effect Transistors
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Silicon Nanowire
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Metal Oxide Semiconductor
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Oxide Semiconductor
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Electrical Characteristics
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Random Telegraph Noise
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Telegraph Noise
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Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise
Japanese Journal of Applied Physics
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2014
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pp. 038005
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San-Lein Wu
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Hsu-Feng Chiu
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Keyword(s):
Metal Oxide
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Field Effect
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Field Effect Transistors
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Metal Oxide Semiconductor
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Oxide Semiconductor
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Metal Gate
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Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxide-semiconductor field-effect transistors
Applied Physics Letters
◽
10.1063/1.3678023
◽
2012
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Leakage Current
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Field Effect
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Gate Dielectric
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Field Effect Transistors
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Metal Oxide Semiconductor
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Oxide Semiconductor
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Random Telegraph Noise
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High K
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Telegraph Noise
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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates
Japanese Journal of Applied Physics
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10.7567/jjap.51.114001
◽
2012
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Vol 51
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pp. 114001
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Cited By ~ 1
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Hiroshi Miki
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Metal Oxide
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Field Effect
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Field Effect Transistors
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Interface State
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Metal Oxide Semiconductor
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Oxide Semiconductor
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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates
Japanese Journal of Applied Physics
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10.1143/jjap.51.114001
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2012
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Vol 51
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pp. 114001
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Hiroshi Miki
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Extraction of time constants ratio over nine orders of magnitude for understanding random telegraph noise in metal–oxide–semiconductor field-effect transistors
Japanese Journal of Applied Physics
◽
10.7567/jjap.53.04ec19
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2014
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Toshiki Obara
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Field Effect
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Metal Oxide Semiconductor
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Oxide Semiconductor
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Random Telegraph Noise
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Time Constants
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Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis
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2014
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Field Effect Transistors
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Random Telegraph Noise
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