GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices

2003 ◽  
Vol 83 (13) ◽  
pp. 2599-2601 ◽  
Author(s):  
W. H. Sun ◽  
J. W. Yang ◽  
C. Q. Chen ◽  
J. P. Zhang ◽  
M. E. Gaevski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Light Emitting Devices

scholarly journals GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells

2015 ◽  
Vol 23 (7) ◽  
pp. A337 ◽  
Author(s):  
Hung-Ming Chang ◽  
Wei-Chih Lai ◽  
Wei-Shou Chen ◽  
Shoou-Jinn Chang
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode onm-Plane Sapphire with AlGaN Multiple Quantum Wells

2010 ◽  
Vol 49 (4) ◽  
pp. 040206 ◽  
Author(s):  
Krishnan Balakrishnan ◽  
Vinod Adivarahan ◽  
Qhalid Fareed ◽  
Mohamed Lachab ◽  
Bin Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Deep Ultraviolet

Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes

2001 ◽  
Vol 40 (Part 2, No. 9A/B) ◽  
pp. L921-L924 ◽  
Author(s):  
Jian Ping Zhang ◽  
Vinod Adivarahan ◽  
Hong Mei Wang ◽  
Qhalid Fareed ◽  
Edmundas Kuokstis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes

2019 ◽  
Vol 7 (22) ◽  
pp. 6534-6538 ◽  
Author(s):  
Shanshan Chen ◽  
Chenxiao Xu ◽  
Xinhua Pan ◽  
Haiping He ◽  
Jingyun Huang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Threading Dislocations ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Dramatically reduced edge threading dislocations and a record IQE of 61% are obtained for ZnO/Zn0.9Mg0.1O MQWs by using GaN/Al2O3 as substrates.

scholarly journals GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

2018 ◽  
Vol 113 (8) ◽  
pp. 082102 ◽  
Author(s):  
I. A. Ajia ◽  
Y. Yamashita ◽  
K. Lorenz ◽  
M. M. Muhammed ◽  
L. Spasevski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Light Emitting Devices

Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices

2008 ◽  
Vol 23 (2-4) ◽  
pp. 406-409 ◽  
Author(s):  
Sung-Nam Lee ◽  
H. S. Paek ◽  
J. K. Son ◽  
H. Kim ◽  
K. K. Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Light Emitting Devices
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