Advantages of Multiple Quantum Wells with Abrupt Interfaces for Light-Emitting Devices

1984 ◽  
pp. 136-146 ◽  
Author(s):  
D. Bimberg ◽  
J. Christen ◽  
A. Steckenborn
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Light Emitting Devices

scholarly journals GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

2018 ◽  
Vol 113 (8) ◽  
pp. 082102 ◽  
Author(s):  
I. A. Ajia ◽  
Y. Yamashita ◽  
K. Lorenz ◽  
M. M. Muhammed ◽  
L. Spasevski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Light Emitting Devices

Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices

2008 ◽  
Vol 23 (2-4) ◽  
pp. 406-409 ◽  
Author(s):  
Sung-Nam Lee ◽  
H. S. Paek ◽  
J. K. Son ◽  
H. Kim ◽  
K. K. Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Light Emitting Devices

scholarly journals Light-emitting devices with tunable color from ZnO nanorods grown on InGaN/GaN multiple quantum wells

2012 ◽  
Vol 20 (S2) ◽  
pp. A270 ◽  
Author(s):  
Han-Yu Shih ◽  
Shih-Hao Cheng ◽  
Jyong-Kuen Lian ◽  
Tai-Yuan Lin ◽  
Yang-Fang Chen
Keyword(s):  
Quantum Wells ◽  
Zno Nanorods ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Light Emitting Devices

GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices

2003 ◽  
Vol 83 (13) ◽  
pp. 2599-2601 ◽  
Author(s):  
W. H. Sun ◽  
J. W. Yang ◽  
C. Q. Chen ◽  
J. P. Zhang ◽  
M. E. Gaevski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Light Emitting Devices

Optically pumped GaInN/GaN multiple quantum wells for the realization of efficient green light-emitting devices

2013 ◽  
Vol 102 (11) ◽  
pp. 113509 ◽  
Author(s):  
Dario Schiavon ◽  
Michael Binder ◽  
Andreas Loeffler ◽  
Matthias Peter
Keyword(s):  
Quantum Wells ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Light Emitting ◽  
Light Emitting Devices

Study on Injection Efficiency in InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes

2008 ◽  
Vol 1 ◽  
pp. 021101 ◽  
Author(s):  
Lai Wang ◽  
Jiaxing Wang ◽  
Hongtao Li ◽  
Guangyi Xi ◽  
Yang Jiang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Injection Efficiency ◽  
Light Emitting

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

2002 ◽  
Vol 722 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitation Power Density ◽  
Light Emitting ◽  
Uv Emission ◽  
Alloy Disorder

AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

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