scholarly journals GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells

2015 ◽  
Vol 23 (7) ◽  
pp. A337 ◽  
Author(s):  
Hung-Ming Chang ◽  
Wei-Chih Lai ◽  
Wei-Shou Chen ◽  
Shoou-Jinn Chang
2001 ◽  
Vol 40 (Part 2, No. 9A/B) ◽  
pp. L921-L924 ◽  
Author(s):  
Jian Ping Zhang ◽  
Vinod Adivarahan ◽  
Hong Mei Wang ◽  
Qhalid Fareed ◽  
Edmundas Kuokstis ◽  
...  

2019 ◽  
Vol 7 (22) ◽  
pp. 6534-6538 ◽  
Author(s):  
Shanshan Chen ◽  
Chenxiao Xu ◽  
Xinhua Pan ◽  
Haiping He ◽  
Jingyun Huang ◽  
...  

Dramatically reduced edge threading dislocations and a record IQE of 61% are obtained for ZnO/Zn0.9Mg0.1O MQWs by using GaN/Al2O3 as substrates.


2001 ◽  
Vol 40 (Part 2, No. 12A) ◽  
pp. L1308-L1310 ◽  
Author(s):  
Muhammad Asif Khan ◽  
Vinod Adivarahan ◽  
Jian Ping Zhang ◽  
Changqing Chen ◽  
Edmundas Kuokstis ◽  
...  

2003 ◽  
Vol 42 (Part 2, No.9A/B) ◽  
pp. L1039-L1040 ◽  
Author(s):  
Changqing Chen ◽  
Vinod Adivarahan ◽  
Jinwei Yang ◽  
Maxim Shatalov ◽  
Edmundas Kuokstis ◽  
...  

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