1.31 μm InGaAs quantum dot light-emitting diodes grown directly in a GaAs matrix by metalorganic chemical-vapor deposition
2006 ◽
Vol 24
(4)
◽
pp. 1922
2002 ◽
Vol 41
(Part 2, No. 6B)
◽
pp. L663-L664
◽
2010 ◽
Vol 49
(7)
◽
pp. 070206
◽
1998 ◽
Vol 27
(6)
◽
pp. 769-771
◽