scholarly journals The role of C2 in nanocrystalline diamond growth

2004 ◽  
Vol 96 (11) ◽  
pp. 6724-6732 ◽  
Author(s):  
J. R. Rabeau ◽  
P. John ◽  
J. I.B. Wilson ◽  
Y. Fan
2000 ◽  
Vol 87 (9) ◽  
pp. 4572-4579 ◽  
Author(s):  
Kungen Teii ◽  
Haruhiko Ito ◽  
Masaru Hori ◽  
Takashi Takeo ◽  
Toshio Goto

1998 ◽  
Vol 08 (PR7) ◽  
pp. Pr7-391-Pr7-399 ◽  
Author(s):  
S. Farhat ◽  
C. Findeling ◽  
F. Silva ◽  
K. Hassouni ◽  
A. Gicquel

1995 ◽  
Vol 10 (11) ◽  
pp. 2685-2688 ◽  
Author(s):  
Qijin Chen ◽  
Zhangda Lin

Diamond film was synthesized on thin Ti wafers (as thin as 40 μm) via hot filament chemical vapor deposition (HFCVD). The hydrogen embrittlement of the titanium substrate and the formation of a thick TiC interlayer were suppressed. A very low pressure (133 Pa) was employed to achieve high-density rapid nucleation and thus to suppress the formation of TiC. Oxygen was added to source gases to lower the growth temperature and therefore to slow down the hydrogenation of the thin Ti substrate. The role of the very low pressure during nucleation is discussed, providing insight into the nucleation mechanism of diamond on a titanium substrate. The as-grown diamond films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and x-ray analysis.


2010 ◽  
Vol 114 (9) ◽  
pp. 3822-3824 ◽  
Author(s):  
K. Tsugawa ◽  
M. Ishihara ◽  
J. Kim ◽  
Y. Koga ◽  
M. Hasegawa

2020 ◽  
Vol 117 (19) ◽  
pp. 194001
Author(s):  
Simon A. Meynell ◽  
Claire A. McLellan ◽  
Lillian B. Hughes ◽  
Wenbo Wang ◽  
Tom E. Mates ◽  
...  

2014 ◽  
Vol 48 ◽  
pp. 6-18 ◽  
Author(s):  
R. Radhika ◽  
N. Kumar ◽  
A.T. Kozakov ◽  
K.J. Sankaran ◽  
S. Dash ◽  
...  

2006 ◽  
Vol 18 (32) ◽  
pp. S1771-S1776 ◽  
Author(s):  
James Birrell ◽  
J E Gerbi ◽  
O A Auciello ◽  
J A Carlisle

2011 ◽  
Vol 20 (5-6) ◽  
pp. 833-838 ◽  
Author(s):  
K. Tsugawa ◽  
S. Kawaki ◽  
M. Ishihara ◽  
J. Kim ◽  
Y. Koga ◽  
...  

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