Role of the plasma composition at the surface on diamond growth

1998 ◽  
Vol 08 (PR7) ◽  
pp. Pr7-391-Pr7-399 ◽  
Author(s):  
S. Farhat ◽  
C. Findeling ◽  
F. Silva ◽  
K. Hassouni ◽  
A. Gicquel
1995 ◽  
Vol 10 (11) ◽  
pp. 2685-2688 ◽  
Author(s):  
Qijin Chen ◽  
Zhangda Lin

Diamond film was synthesized on thin Ti wafers (as thin as 40 μm) via hot filament chemical vapor deposition (HFCVD). The hydrogen embrittlement of the titanium substrate and the formation of a thick TiC interlayer were suppressed. A very low pressure (133 Pa) was employed to achieve high-density rapid nucleation and thus to suppress the formation of TiC. Oxygen was added to source gases to lower the growth temperature and therefore to slow down the hydrogenation of the thin Ti substrate. The role of the very low pressure during nucleation is discussed, providing insight into the nucleation mechanism of diamond on a titanium substrate. The as-grown diamond films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and x-ray analysis.


2020 ◽  
Vol 117 (19) ◽  
pp. 194001
Author(s):  
Simon A. Meynell ◽  
Claire A. McLellan ◽  
Lillian B. Hughes ◽  
Wenbo Wang ◽  
Tom E. Mates ◽  
...  

Langmuir ◽  
2004 ◽  
Vol 20 (23) ◽  
pp. 10093-10099 ◽  
Author(s):  
Chih-Chiang Weng ◽  
Jiunn-Der Liao ◽  
Yi-Te Wu ◽  
Ming-Chen Wang ◽  
Ruth Klauser ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (46) ◽  
pp. 27357-27368 ◽  
Author(s):  
Saidjafarzoda Ilhom ◽  
Adnan Mohammad ◽  
Deepa Shukla ◽  
John Grasso ◽  
Brian G. Willis ◽  
...  

Hollow-cathode plasma-generated hydrogen radicals induce crystal phase transformation from h-InN to c-In2O3 during plasma-enhanced atomic layer deposition using trimethyl-indium and Ar/N2 plasma.


2007 ◽  
Vol 16 (2) ◽  
pp. 409-411 ◽  
Author(s):  
Norio Tokuda ◽  
Takeyasu Saito ◽  
Hitoshi Umezawa ◽  
Hideyo Okushi ◽  
Satoshi Yamasaki

2004 ◽  
Vol 32 (5) ◽  
pp. 1805-1811 ◽  
Author(s):  
D. Osin ◽  
R. Doron ◽  
R. Arad ◽  
K. Tsigutkin ◽  
A. Starobinets ◽  
...  

2004 ◽  
Vol 96 (11) ◽  
pp. 6724-6732 ◽  
Author(s):  
J. R. Rabeau ◽  
P. John ◽  
J. I.B. Wilson ◽  
Y. Fan

1992 ◽  
Vol 270 ◽  
Author(s):  
Ching-Hsong Wu ◽  
T. J. Potter ◽  
M. A. Tamor

ABSTRACTA mass spectrometric analysis of heavy hydrocarbons (HHCs) during hot-filament CVD diamond growth was performed together with in situ monitoring of the growth rate. Many HHCs were detected and tentatively identified. Of all HHCs studied, only diacetylene shows good correlation with the diamond growth rate under various deposition conditions. Its possible role is discussed.


1995 ◽  
Vol 399 ◽  
Author(s):  
Michael Frenklach

ABSTRACT(1+1)-dimensional stochastic simulations were performed representing elementary processes underlying chemical vapor deposition of diamond films. The results exhibit different growth regimes, depending on the values assigned to kinetic rates, and generally support the critical role of surface migration suggested earlier for the growth of diamond.


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