Visualization of electrons and holes localized in gate thin film of metal SiO2–Si3N4–SiO2 semiconductor-type flash memory using scanning nonlinear dielectric microscopy after writing-erasing cycling

2005 ◽  
Vol 86 (6) ◽  
pp. 063515 ◽  
Author(s):  
Koichiro Honda ◽  
Sunao Hashimoto ◽  
Yasuo Cho
Keyword(s):  
Thin Film ◽  
Flash Memory ◽  
Nonlinear Dielectric ◽  
Semiconductor Type

Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear dielectric microscopy

2003 ◽  
Vol 803 ◽  
Author(s):  
Koichiro Honda ◽  
Yasuo Cho
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Flash Memory ◽  
The Other ◽  
Oxide Semiconductor ◽  
Nonlinear Dielectric ◽  
Other Hand ◽  
Nitride Oxide ◽  
Semiconductor Type

ABSTRACTWe used scanning nonlinear dielectric microscopy to observe the position of electrons and holes in the gate SiO2-Si3N4-SiO2 (ONO) film of metal-oxide-nitride-oxide semiconductor type Flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

Low-Temperature Polycrystalline Silicon Thin-Film Flash Memory With Hafnium Silicate

2007 ◽  
Vol 54 (3) ◽  
pp. 531-536 ◽  
Author(s):  
Yu-Hsien Lin ◽  
Chao-Hsin Chien ◽  
Tung-Huan Chou ◽  
Tien-Sheng Chao ◽  
Tan-Fu Lei
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Flash Memory ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Hafnium Silicate

A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

2006 ◽  
Author(s):  
Erh-Kun Lai ◽  
Hang-Ting Lue ◽  
Yi-Hsuan Hsiao ◽  
Jung-Yu Hsieh ◽  
Chi-Pin Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Flash Memory ◽  
Thin Film Transistor

Development of Ferroelectric Data Storage Test System for High-Density and High-speed Read/Write

2009 ◽  
Vol 1199 ◽  
Author(s):  
Yoshiomi Hiranaga ◽  
Kenkou Tanaka ◽  
Tomoya Uda ◽  
Yuichi Kurihashi ◽  
Yasuhiro Kimoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Data Storage ◽  
High Speed ◽  
Test System ◽  
Control Technique ◽  
Recording Media ◽  
Bit Rate ◽  
Recording Medium ◽  
Storage Test ◽  
Nonlinear Dielectric

AbstractIn this study, we have developed ferroelectric data storage test systems based on scanning nonlinear dielectric microscopy (SNDM) to conduct various experiments concerning read/write capability. Nanodomain formation on ferroelectric recording media was studied using the data storage test system. A nanodomain dot array was successfully written on a single-crystal LiTaO3 recording medium. The diameter of the written dot was as small as 7 nm. Epitaxial-thin-film LiTaO3 recording media were also developed. Nanodomain dots with the diameter of 25 nm were written on the thin-film recording medium. In addition, a non-contact probe-height control technique was adopted to solve the problem of tip abrasion using higher-order nonlinear dielectric response detection method. Finally, a hard-disk-drive (HDD)-type ferroelectric data storage test system was developed for conducting read/write tests under conditions close to those of actual operation. Capabilities of reading at the bit rate of 2 Mbps and writing at the bit rate of 20 Mbps were confirmed using the HDD-type data storage test system.

Low Temperature Polycrystalline Silicon Thin Film Transistors Flash Memory with Silicon Nanocrystal Dot

2007 ◽  
Vol 46 (No. 27) ◽  
pp. L661-L663 ◽  
Author(s):  
Kazunori Ichikawa ◽  
Yukiharu Uraoka ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Flash Memory ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Nanocrystal ◽  
Silicon Thin Film
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